CEM6056L Todos los transistores

 

CEM6056L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CEM6056L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 360 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0078 Ohm
   Paquete / Cubierta: SO8
     - Selección de transistores por parámetros

 

CEM6056L Datasheet (PDF)

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 cem6056l.pdf pdf_icon

CEM6056L

CEM6056LN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 14.5A, RDS(ON) = 7.8 m @VGS = 10V. RDS(ON) = 10 m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DRoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedP

 7.1. Size:418K  cet
 cem6056.pdf pdf_icon

CEM6056L

CEM6056N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES60V, 15A, RDS(ON) = 7.5 m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.D D D D8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter

 9.1. Size:399K  cet
 cem6088l.pdf pdf_icon

CEM6056L

CEM6088LPRELIMINARYDual N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 9.0A, RDS(ON) = 14.5m @VGS = 10V. RDS(ON) = 18.0m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant. D1 D1 D2 D28 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM

 9.2. Size:407K  cet
 cem6086l.pdf pdf_icon

CEM6056L

CEM6086LPRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 12A, RDS(ON) = 12m @VGS = 10V. RDS(ON) = 15m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C un

MOSTRAR MÁS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: PMN25EN | P9515BD | IRFSL31N20DP | AP9563GK | HM4612 | OSG80R900FF | AOTF7N70

 

 
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