CEM6056L - аналоги, параметры транзистора - Справочник транзисторов

CEM6056L технические параметры

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CEM6056L N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 14.5A, RDS(ON) = 7.8 m @VGS = 10V. RDS(ON) = 10 m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D RoHS compliant. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted P

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CEM6056 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 15A, RDS(ON) = 7.5 m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D D D D 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter

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cem6088l.pdf pdf_icon

CEM6088L PRELIMINARY Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 9.0A, RDS(ON) = 14.5m @VGS = 10V. RDS(ON) = 18.0m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D1 D1 D2 D2 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM

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cem6086l.pdf pdf_icon

CEM6086L PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 12A, RDS(ON) = 12m @VGS = 10V. RDS(ON) = 15m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C un