CJQ4435S Todos los transistores

 

CJQ4435S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CJQ4435S
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15(max) nS
   Cossⓘ - Capacitancia de salida: 165 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
   Paquete / Cubierta: SOP8
     - Selección de transistores por parámetros

 

CJQ4435S Datasheet (PDF)

 ..1. Size:2130K  jiangsu
cjq4435s.pdf pdf_icon

CJQ4435S

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4435S P-Channel Power MOSFET ID R DS(o n) TYPV(BR)DSS SOP818m@-10V -30V -7.3A26m@ -4.5V DESCRIPTION The CJQ4435S uses advanced trench technology to provide excellent RDS(on), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally

 7.1. Size:1856K  jiangsu
cjq4435.pdf pdf_icon

CJQ4435S

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4435 P-Channel Power MOSFET ID V(BR)DSS R DS(on) MAX SOP8 24 -10V m@-9.1A-30V 35m@ -4.5 V DESCRIPTION The CJQ4435 uses advanced trench technology to provide excellent RDS(on), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is idea

 8.1. Size:653K  jiangsu
cjq4438.pdf pdf_icon

CJQ4435S

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4438 N-Channel MOSFET SOP8 ID V(BR)DSS RDS(on)MAX 22m@10V60V 8.2A@4.5V36m APPLICATION FEATURE Load Switch TrenchFET Power MOSFET PWM applications Low R (on) DS Low Gate ChargeEquivalent Circuit MARKING Q4438 = Device code Q4438 Q4438 Solid d

 9.1. Size:2418K  jiangsu
cjq4406.pdf pdf_icon

CJQ4435S

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD CJQ4406 N-Channel Power MOSFETID V (BR)DSS RDS(on)MAX SOP8 12m@10V30V10A16m@4.5VDESCRIPTION The CJQ4406 uses advanced trench technology to provide excellent RDS(ON)with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications.APPLIC

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: FQB65N06TM | SMK0765F | FRX130R1 | C2T206 | STI32N65M5 | 2N6904 | AONR20485

 

 
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