CJQ4435S Todos los transistores

 ..1. Size:2130K  jiangsu
 cjq4435s.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4435S P-Channel Power MOSFET ID R DS(o n) TYP V(BR)DSS SOP8 18m @-10V -30V -7.3A 26m @ -4.5V DESCRIPTION The CJQ4435S uses advanced trench technology to provide excellent RDS(on), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally

 7.1. Size:1856K  jiangsu
 cjq4435.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4435 P-Channel Power MOSFET ID V(BR)DSS R DS(on) MAX SOP8 24 -10V m @ -9.1A -30V 35m @ -4.5 V DESCRIPTION The CJQ4435 uses advanced trench technology to provide excellent RDS(on), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is idea

 8.1. Size:653K  jiangsu
 cjq4438.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4438 N-Channel MOSFET SOP8 ID V(BR)DSS RDS(on)MAX 22m @10V 60V 8.2A @4.5V 36m APPLICATION FEATURE Load Switch TrenchFET Power MOSFET PWM applications Low R (on) DS Low Gate Charge Equivalent Circuit MARKING Q4438 = Device code Q4438 Q4438 Solid d

 9.1. Size:2418K  jiangsu
 cjq4406.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD CJQ4406 N-Channel Power MOSFET ID V (BR)DSS RDS(on)MAX SOP8 12m @10V 30V 10A 16m @4.5V DESCRIPTION The CJQ4406 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. APPLIC

 9.2. Size:2370K  jiangsu
 cjq4410.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4410 N-Channel Power MOSFET ID V(BR)DSS R DS(on) MAX SOP8 13.5 10 m @ V 7.5A 30V 20m @ 4.5V DESCRIPTION The CJQ4410 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideall

 9.3. Size:1628K  jiangsu
 cjq4459.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4459 P-Channel Power MOSFET ID V(BR)DSS R DS(on) MAX SOP8 46m @ -10V -6.5A -30V 72m @ -4.5 V DESCRIPTION The CJQ4459 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protectio