CJQ4435S PDF and Equivalents Search

 

CJQ4435S Specs and Replacement

Type Designator: CJQ4435S

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 max nS

Cossⓘ - Output Capacitance: 165 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: SOP8

CJQ4435S substitution

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CJQ4435S datasheet

 ..1. Size:2130K  jiangsu
cjq4435s.pdf pdf_icon

CJQ4435S

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4435S P-Channel Power MOSFET ID R DS(o n) TYP V(BR)DSS SOP8 18m @-10V -30V -7.3A 26m @ -4.5V DESCRIPTION The CJQ4435S uses advanced trench technology to provide excellent RDS(on), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally ... See More ⇒

 7.1. Size:1856K  jiangsu
cjq4435.pdf pdf_icon

CJQ4435S

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4435 P-Channel Power MOSFET ID V(BR)DSS R DS(on) MAX SOP8 24 -10V m @ -9.1A -30V 35m @ -4.5 V DESCRIPTION The CJQ4435 uses advanced trench technology to provide excellent RDS(on), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is idea... See More ⇒

 8.1. Size:653K  jiangsu
cjq4438.pdf pdf_icon

CJQ4435S

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4438 N-Channel MOSFET SOP8 ID V(BR)DSS RDS(on)MAX 22m @10V 60V 8.2A @4.5V 36m APPLICATION FEATURE Load Switch TrenchFET Power MOSFET PWM applications Low R (on) DS Low Gate Charge Equivalent Circuit MARKING Q4438 = Device code Q4438 Q4438 Solid d... See More ⇒

 9.1. Size:2418K  jiangsu
cjq4406.pdf pdf_icon

CJQ4435S

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD CJQ4406 N-Channel Power MOSFET ID V (BR)DSS RDS(on)MAX SOP8 12m @10V 30V 10A 16m @4.5V DESCRIPTION The CJQ4406 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. APPLIC... See More ⇒

Detailed specifications: CJL2623, CJL8205A, CJM1206, CJMNP517, CJMPD11, CJND2004, CJQ07N10, CJQ4406, 60N06, CJQ4503, CJQ4606, CJQ4800, CJQ4824, CJQ4828, CJQ6601, CJQ7328, CJQ9926

Keywords - CJQ4435S MOSFET specs

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