DMN1003UCA6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMN1003UCA6
   Código: M1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.67 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 23.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.3 V
   Qgⓘ - Carga de la puerta: 56.5 nC
   trⓘ - Tiempo de subida: 1694 nS
   Cossⓘ - Capacitancia de salida: 850 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
   Paquete / Cubierta: X3-DSN3518-6

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DMN1003UCA6 Datasheet (PDF)

..1. Size:508K diodes
dmn1003uca6.pdf

DMN1003UCA6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features CSP with Footprint 3.54mm 1.77mm IS Height = 0.21mm for Low Profile BVSSS RSS(ON) Max TA = +25C ESD Protection of Gate 3.2m @ VGS = 4.5V 23.6A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12V 6.3m @ VGS = 2.5V 16.8A Halogen and Antimony Free. Green De

8.1. Size:147K diodes
dmn100.pdf

DMN100N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Extremely Low On-Resistance: 170m @ VGS = 4.5V Case: SC-59 Case Material: Molded Plastic, "Green" Molding Compound. High Drain Current: 1.1A UL Flammability Classification Rating 94V-0 Ideal for Notebook Computer, Portable Phone, PCMCIA Moisture Sensitivity: Level 1 per J-

8.2. Size:430K diodes
dmn1002uca6.pdf

DMN1002UCA6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features CSP with Footprint 3.05mm 1.77mm IS BVSSS RSS(ON) Max Height = 0.11mm for Low Profile TA = +25C ESD Protection of Gate 2.75m @ VGS = 4.5V 24.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12V 6.1m @ VGS = 2.5V 16.4A Halogen and Antimony Free. Green D

8.3. Size:410K diodes
dmn1006uca6.pdf

DMN1006UCA6 6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features IS CSP with Footprint 2.70mm 1.81mm BVSSS RSS(ON) MAX TA = +25C Height = 0.21mm for Low Profile ESD Protection of Gate 5.9m @ VGS = 4.5V 16.6A 12V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 9.0m @ VGS = 2.5V 12.1A Halogen and Antimony Free. Green De

8.4. Size:89K tysemi
dmn100.pdf

Product specificationDMN100N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Extremely Low On-Resistance: 170m @ VGS = 4.5V Case: SC59 Case Material: Molded Plastic, "Green" Molding Compound. High Drain Current: 1.1A UL Flammability Classification Rating 94V-0 Ideal for Notebook Computer, Portable Phone, PCMCIA Moisture Sensitivity: Level 1 pe

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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