DMN1003UCA6 Todos los transistores

 

DMN1003UCA6 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMN1003UCA6

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.67 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 23.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 1694 nS

Cossⓘ - Capacitancia de salida: 850 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm

Encapsulados: X3-DSN3518-6

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DMN1003UCA6 datasheet

 ..1. Size:508K  diodes
 dmn1003uca6.pdf pdf_icon

DMN1003UCA6

DMN1003UCA6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features CSP with Footprint 3.54mm 1.77mm IS Height = 0.21mm for Low Profile BVSSS RSS(ON) Max TA = +25 C ESD Protection of Gate 3.2m @ VGS = 4.5V 23.6A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12V 6.3m @ VGS = 2.5V 16.8A Halogen and Antimony Free. Green De

 8.1. Size:147K  diodes
 dmn100.pdf pdf_icon

DMN1003UCA6

DMN100 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Extremely Low On-Resistance 170m @ VGS = 4.5V Case SC-59 Case Material Molded Plastic, "Green" Molding Compound. High Drain Current 1.1A UL Flammability Classification Rating 94V-0 Ideal for Notebook Computer, Portable Phone, PCMCIA Moisture Sensitivity Level 1 per J-

 8.2. Size:430K  diodes
 dmn1002uca6.pdf pdf_icon

DMN1003UCA6

DMN1002UCA6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features CSP with Footprint 3.05mm 1.77mm IS BVSSS RSS(ON) Max Height = 0.11mm for Low Profile TA = +25 C ESD Protection of Gate 2.75m @ VGS = 4.5V 24.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12V 6.1m @ VGS = 2.5V 16.4A Halogen and Antimony Free. Green D

 8.3. Size:410K  diodes
 dmn1006uca6.pdf pdf_icon

DMN1003UCA6

DMN1006UCA6 6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features IS CSP with Footprint 2.70mm 1.81mm BVSSS RSS(ON) MAX TA = +25 C Height = 0.21mm for Low Profile ESD Protection of Gate 5.9m @ VGS = 4.5V 16.6A 12V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 9.0m @ VGS = 2.5V 12.1A Halogen and Antimony Free. Green De

MOSTRAR MÁS

Otros transistores... DMG2301LK , DMG2302UK , DMG2302UQ , DMG2305UXQ , DMG3414UQ , DMG7401SFGQ , DMHT6016LFJ , DMN1002UCA6 , NCEP15T14 , DMN1006UCA6 , DMN2009USS , DMN2036UCB4 , DMN2056U , DMN2058U , DMN3009LFVW , DMN3009SK3 , DMN3018SSS .

History: SM7340EHKP | SM4804DSK | LPM2301B3F | JCS4N60CB | AP4511GED-HF | 2SK3496-01MR

 

 

 

 

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