DMN1003UCA6
MOSFET. Datasheet pdf. Equivalent
Type Designator: DMN1003UCA6
Marking Code: M1
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.67
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3
V
|Id|ⓘ - Maximum Drain Current: 23.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 56.5
nC
trⓘ - Rise Time: 1694
nS
Cossⓘ -
Output Capacitance: 850
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0032
Ohm
Package: X3-DSN3518-6
DMN1003UCA6
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMN1003UCA6
Datasheet (PDF)
..1. Size:508K diodes
dmn1003uca6.pdf
DMN1003UCA6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features CSP with Footprint 3.54mm 1.77mm IS Height = 0.21mm for Low Profile BVSSS RSS(ON) Max TA = +25C ESD Protection of Gate 3.2m @ VGS = 4.5V 23.6A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12V 6.3m @ VGS = 2.5V 16.8A Halogen and Antimony Free. Green De
8.1. Size:147K diodes
dmn100.pdf
DMN100N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Extremely Low On-Resistance: 170m @ VGS = 4.5V Case: SC-59 Case Material: Molded Plastic, "Green" Molding Compound. High Drain Current: 1.1A UL Flammability Classification Rating 94V-0 Ideal for Notebook Computer, Portable Phone, PCMCIA Moisture Sensitivity: Level 1 per J-
8.2. Size:430K diodes
dmn1002uca6.pdf
DMN1002UCA6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features CSP with Footprint 3.05mm 1.77mm IS BVSSS RSS(ON) Max Height = 0.11mm for Low Profile TA = +25C ESD Protection of Gate 2.75m @ VGS = 4.5V 24.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12V 6.1m @ VGS = 2.5V 16.4A Halogen and Antimony Free. Green D
8.3. Size:410K diodes
dmn1006uca6.pdf
DMN1006UCA6 6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features IS CSP with Footprint 2.70mm 1.81mm BVSSS RSS(ON) MAX TA = +25C Height = 0.21mm for Low Profile ESD Protection of Gate 5.9m @ VGS = 4.5V 16.6A 12V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 9.0m @ VGS = 2.5V 12.1A Halogen and Antimony Free. Green De
8.4. Size:89K tysemi
dmn100.pdf
Product specificationDMN100N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Extremely Low On-Resistance: 170m @ VGS = 4.5V Case: SC59 Case Material: Molded Plastic, "Green" Molding Compound. High Drain Current: 1.1A UL Flammability Classification Rating 94V-0 Ideal for Notebook Computer, Portable Phone, PCMCIA Moisture Sensitivity: Level 1 pe
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