DMN2009USS Todos los transistores

 

DMN2009USS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMN2009USS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 12.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6.2 nS
   Cossⓘ - Capacitancia de salida: 383 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: SO-8
     - Selección de transistores por parámetros

 

DMN2009USS Datasheet (PDF)

 ..1. Size:431K  diodes
dmn2009uss.pdf pdf_icon

DMN2009USS

DMN2009USS 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID Max BVDSS RDS(ON) Max Low Gate Threshold Voltage TA = +25C Low Input Capacitance 8m @ VGS = 10V 12.8A Fast Switching Speed 20V 9m @ VGS = 4.5V 12.1A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12m @ VGS

 7.1. Size:145K  diodes
dmn2009lss.pdf pdf_icon

DMN2009USS

DMN2009LSSSINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SO-8 8m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 9m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020 12m @ VGS = 2.5V Terminals Connections: See Diagram

 8.1. Size:204K  diodes
dmn2004vk.pdf pdf_icon

DMN2009USS

DMN2004VKDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Termin

 8.2. Size:189K  diodes
dmn2004k.pdf pdf_icon

DMN2009USS

DMN2004KN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits Low On-Resistance: RDS(ON) = 550(max)m @ VGS = 4.5V ID V(BR)DSS RDS(ON) Low Gate Threshold Voltage TA = 25C Low Input Capacitance 0.55 @ VGS = 4.5V 630mA Fast Switching Speed 20V Low Input/Output Leakage 0.9 @ VGS = 1.8V 410mA ESD Protec

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRFZ24L

 

 
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