All MOSFET. DMN2009USS Datasheet

 

DMN2009USS Datasheet and Replacement


   Type Designator: DMN2009USS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 12.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6.2 nS
   Cossⓘ - Output Capacitance: 383 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: SO-8
      - MOSFET Cross-Reference Search

 

DMN2009USS Datasheet (PDF)

 ..1. Size:431K  diodes
dmn2009uss.pdf pdf_icon

DMN2009USS

DMN2009USS 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID Max BVDSS RDS(ON) Max Low Gate Threshold Voltage TA = +25C Low Input Capacitance 8m @ VGS = 10V 12.8A Fast Switching Speed 20V 9m @ VGS = 4.5V 12.1A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12m @ VGS

 7.1. Size:145K  diodes
dmn2009lss.pdf pdf_icon

DMN2009USS

DMN2009LSSSINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SO-8 8m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 9m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020 12m @ VGS = 2.5V Terminals Connections: See Diagram

 8.1. Size:204K  diodes
dmn2004vk.pdf pdf_icon

DMN2009USS

DMN2004VKDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Termin

 8.2. Size:189K  diodes
dmn2004k.pdf pdf_icon

DMN2009USS

DMN2004KN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits Low On-Resistance: RDS(ON) = 550(max)m @ VGS = 4.5V ID V(BR)DSS RDS(ON) Low Gate Threshold Voltage TA = 25C Low Input Capacitance 0.55 @ VGS = 4.5V 630mA Fast Switching Speed 20V Low Input/Output Leakage 0.9 @ VGS = 1.8V 410mA ESD Protec

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AP10TN135K | MC08N005C | IRLR024 | CED05N8 | STD8NM60N-1 | AON6794 | BL10N70-A

Keywords - DMN2009USS MOSFET datasheet

 DMN2009USS cross reference
 DMN2009USS equivalent finder
 DMN2009USS lookup
 DMN2009USS substitution
 DMN2009USS replacement

 

 
Back to Top

 


 
.