DMN2009USS Specs and Replacement
Type Designator: DMN2009USS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 12.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.2 nS
Cossⓘ -
Output Capacitance: 383 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: SO-8
- MOSFET ⓘ Cross-Reference Search
DMN2009USS datasheet
..1. Size:431K diodes
dmn2009uss.pdf 
DMN2009USS 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID Max BVDSS RDS(ON) Max Low Gate Threshold Voltage TA = +25 C Low Input Capacitance 8m @ VGS = 10V 12.8A Fast Switching Speed 20V 9m @ VGS = 4.5V 12.1A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12m @ VGS ... See More ⇒
7.1. Size:145K diodes
dmn2009lss.pdf 
DMN2009LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SO-8 8m @ VGS = 10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 9m @ VGS = 4.5V Moisture Sensitivity Level 1 per J-STD-020 12m @ VGS = 2.5V Terminals Connections See Diagram ... See More ⇒
8.1. Size:204K diodes
dmn2004vk.pdf 
DMN2004VK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case SOT-563 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity Level 1 per J-STD-020 Low Input Capacitance Termin... See More ⇒
8.2. Size:189K diodes
dmn2004k.pdf 
DMN2004K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits Low On-Resistance RDS(ON) = 550(max)m @ VGS = 4.5V ID V(BR)DSS RDS(ON) Low Gate Threshold Voltage TA = 25 C Low Input Capacitance 0.55 @ VGS = 4.5V 630mA Fast Switching Speed 20V Low Input/Output Leakage 0.9 @ VGS = 1.8V 410mA ESD Protec... See More ⇒
8.3. Size:162K diodes
dmn2005lpk.pdf 
DMN2005LPK N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case DFN1006-3 Low Gate Threshold Voltage Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020 Low Input/Output Leakage Terminal Connections S... See More ⇒
8.4. Size:239K diodes
dmn2005k.pdf 
DMN2005K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case SOT-23 Very Low Gate Threshold Voltage, 0.9V Max. Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020C Low Input/Output Leakage ... See More ⇒
8.5. Size:178K diodes
dmn2005dlp4k.pdf 
DMN2005DLP4K DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case DFN1310H4-6 Very Low Gate Threshold Voltage, 0.9V Max. Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed ... See More ⇒
8.6. Size:284K diodes
dmn2004dmk.pdf 
DMN2004DMK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case SOT-26 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity Level 1 per J-STD-020C Low Input Capacitance Term... See More ⇒
8.7. Size:334K diodes
dmn2005ufg.pdf 
DMN2005UFG 20V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max TA = 25 C (t... See More ⇒
8.8. Size:278K diodes
dmn2004dwk.pdf 
DMN2004DWK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case SOT-363 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity Level 1 per J-STD-020C Low Input Capacitance Ter... See More ⇒
8.9. Size:172K diodes
dmn2004wk.pdf 
DMN2004WK N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance RDS(ON) Case SOT-323 Case Material Molded Plastic, Green Molding Compound. Low Gate Threshold Voltage UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per J-STD-020D Fast Switching Speed Terminals Finish ... See More ⇒
8.10. Size:184K diodes
dmn2004tk.pdf 
DMN2004TK N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SOT-523 Low Gate Threshold Voltage Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per J-STD-020 Fast Switching Speed Terminals Finish Matte T... See More ⇒
8.11. Size:166K diodes
dmn2005lp4k.pdf 
DMN2005LP4K N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case DFN1006H4-3 Very Low Gate Threshold Voltage, 0.9V Max. Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020 Low Input/Output Leakage Term... See More ⇒
Detailed specifications: DMG2302UQ, DMG2305UXQ, DMG3414UQ, DMG7401SFGQ, DMHT6016LFJ, DMN1002UCA6, DMN1003UCA6, DMN1006UCA6, STP80NF70, DMN2036UCB4, DMN2056U, DMN2058U, DMN3009LFVW, DMN3009SK3, DMN3018SSS, DMN3023L, DMN3032LFDB
Keywords - DMN2009USS MOSFET specs
DMN2009USS cross reference
DMN2009USS equivalent finder
DMN2009USS pdf lookup
DMN2009USS substitution
DMN2009USS replacement
Can't find your MOSFET?
Learn how to find a substitute transistor by analyzing voltage, current and package compatibility