DMN2009USS PDF and Equivalents Search

 

DMN2009USS Specs and Replacement

Type Designator: DMN2009USS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 12.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.2 nS

Cossⓘ - Output Capacitance: 383 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: SO-8

DMN2009USS substitution

- MOSFET ⓘ Cross-Reference Search

 

DMN2009USS datasheet

 ..1. Size:431K  diodes
dmn2009uss.pdf pdf_icon

DMN2009USS

DMN2009USS 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID Max BVDSS RDS(ON) Max Low Gate Threshold Voltage TA = +25 C Low Input Capacitance 8m @ VGS = 10V 12.8A Fast Switching Speed 20V 9m @ VGS = 4.5V 12.1A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12m @ VGS ... See More ⇒

 7.1. Size:145K  diodes
dmn2009lss.pdf pdf_icon

DMN2009USS

DMN2009LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SO-8 8m @ VGS = 10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 9m @ VGS = 4.5V Moisture Sensitivity Level 1 per J-STD-020 12m @ VGS = 2.5V Terminals Connections See Diagram ... See More ⇒

 8.1. Size:204K  diodes
dmn2004vk.pdf pdf_icon

DMN2009USS

DMN2004VK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case SOT-563 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity Level 1 per J-STD-020 Low Input Capacitance Termin... See More ⇒

 8.2. Size:189K  diodes
dmn2004k.pdf pdf_icon

DMN2009USS

DMN2004K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits Low On-Resistance RDS(ON) = 550(max)m @ VGS = 4.5V ID V(BR)DSS RDS(ON) Low Gate Threshold Voltage TA = 25 C Low Input Capacitance 0.55 @ VGS = 4.5V 630mA Fast Switching Speed 20V Low Input/Output Leakage 0.9 @ VGS = 1.8V 410mA ESD Protec... See More ⇒

Detailed specifications: DMG2302UQ, DMG2305UXQ, DMG3414UQ, DMG7401SFGQ, DMHT6016LFJ, DMN1002UCA6, DMN1003UCA6, DMN1006UCA6, STP80NF70, DMN2036UCB4, DMN2056U, DMN2058U, DMN3009LFVW, DMN3009SK3, DMN3018SSS, DMN3023L, DMN3032LFDB

Keywords - DMN2009USS MOSFET specs

 DMN2009USS cross reference

 DMN2009USS equivalent finder

 DMN2009USS pdf lookup

 DMN2009USS substitution

 DMN2009USS replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 

 

↑ Back to Top
.