DMN2056U MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMN2056U
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.94 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 2.8 nS
   Cossⓘ - Capacitancia de salida: 47 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.038 Ohm
   Paquete / Cubierta: SOT23

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DMN2056U Datasheet (PDF)

..1. Size:327K diodes
dmn2056u.pdf

DMN2056U 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max BVDSS RDS(ON) max Low Gate Threshold Voltage TA = +25C Low Input Capacitance 38m @ VGS = 4.5V 4.0A Fast Switching Speed 20V 45m @ VGS = 2.5V 3.7A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

8.1. Size:168K diodes
dmn2050l.pdf

DMN2050LN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-23 29m @VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 50m @VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-020D 100m

8.2. Size:231K diodes
dmn2050lfdb.pdf

DMN2050LFDBDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C Fast Switching Speed 45m @ VGS = 4.5V 4.5A Low Input/Output Leakage 20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 55m @ VGS = 2.5V 4.1A Halogen and Antimony Free

8.3. Size:480K diodes
dmn2058u.pdf

DMN2058U 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance BVDSS RDS(ON) Max ID Max Low Gate Threshold Voltage Low Input Capacitance 4.6A 35m @ VGS = 10V Fast Switching Speed 20V Low Input/Output Leakage 40m @ VGS = 4.5V 4.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen an

8.4. Size:152K tysemi
dmn2050l.pdf

Product specificationDMN2050LN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-23 29m @VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 50m @VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-020D 100m @VGS = 2.0V Terminal Connections

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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