DMN61D8LVT Todos los transistores

 

DMN61D8LVT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMN61D8LVT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.09 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 0.63 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 301 nS
   Cossⓘ - Capacitancia de salida: 17 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.8 Ohm
   Paquete / Cubierta: TSOT26
 

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DMN61D8LVT Datasheet (PDF)

 ..1. Size:545K  diodes
 dmn61d8l dmn61d8lvt.pdf pdf_icon

DMN61D8LVT

DMN61D8L/LVT Product Summary Features and Benefits ID max Provides a more reliable and robust interface between sensitive V(BR)DSS RDS(ON) max TA = +25C logic and DC relay coils. Replaces 3-4 discrete components enabling PCB footprint to be 1.8 @ VGS = 5V 60V 470mA reduced. 2.4 @ VGS = 3V Internal active clamp removes the need for external zener diode.

 6.1. Size:505K  diodes
 dmn61d8lq.pdf pdf_icon

DMN61D8LVT

DMN61D8LQ INTEGRATED RELAY AND INDUCTIVE LOAD DRIVER Product Summary Features and Benefits Provides A More Reliable And Robust Interface Between ID Max Sensitive Logic And DC Relay Coils BVDSS RDS(ON) Max TA = +25 Replaces 3 to 4 Discrete Components Enabling PCB Footprint C To Be Reduced 1.8 @ VGS = 5V 60V 470mA Internal Active Clamp Removes The Need For E

 8.1. Size:480K  diodes
 dmn61d9uw.pdf pdf_icon

DMN61D8LVT

DMN61D9UW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance 2 @ VGS = 5.0V 340mA 60V Fast Switching Speed 300mA 2.5 @ VGS = 2.5V Low Input/Output Leakage ESD Protected Up To 2kV Description Totally Lead-Free & Fully RoHS Compliant (Not

 9.1. Size:552K  diodes
 dmn6140l.pdf pdf_icon

DMN61D8LVT

DMN6140L 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance V(BR)DSS RDS(on) max TA = +25C Low Input Capacitance Fast Switching Speed 140m @ VGS = 10V 2.3A 60V Low Input/Output Leakage 170m @ VGS = 4.5V 2.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gr

MOSTRAR MÁS

Otros transistores... DMN4060SVT , DMN4800LSSQ , DMN53D0LQ , DMN6040SSDQ , DMN6040SVTQ , DMN6070SY , DMN61D8L , DMN61D8LQ , IRF830 , DMN61D9UW , DMN62D0U , DMN63D8L , DMN63D8LW , DMN65D8LQ , DMN67D8L , DMN67D8LW , DMN7022LFGQ .

History: MTP3N100 | FHU4N65D | ME95N03T | GM2302 | AO4800 | AON7518 | IPB77N06S2-12

 

 
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