DMNH6042SSDQ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMNH6042SSDQ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5.3 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 1.9 nS
Cossⓘ - Capacitancia de salida: 83 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de DMNH6042SSDQ MOSFET
DMNH6042SSDQ Datasheet (PDF)
dmnh6042ssdq.pdf

DMNH6042SSDQ 60V DUAL N-CHANNEL 175C MOSFET Product Summary Features and Benefits Rated to +175C Ideal for High Ambient Temperature ID Max V(BR)DSS RDS(ON) Max TC = +25C Environments 100% Unclamped Inductive Switching Ensures More Reliable 50m @ VGS = 10V 16.7A and Robust End Application 60V Low RDS(ON) Minimizes Power Losses 65m @ VGS
dmnh6042sk3.pdf

DMNH6042SK3 Green60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Features Product Summary Rated to +175 Ideal for High Ambient Temperature C ID Max BVDSS RDS(ON) Max Environments TC = +25C 100% Unclamped Inductive Switching Ensures More Reliable 50m @ VGS = 10V 25A and Robust End Application 60V 65m @ VGS = 4.5V 22A Low On-Resistance
dmnh6042sk3.pdf

isc N-Channel MOSFET Transistor DMNH6042SK3FEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 50m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
dmnh6012lk3.pdf

Green DMNH6012LK3 60V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C - Ideal for High Ambient Temperature Environments ID max BVDSS RDS(ON) max 100% Unclamped Inductive Switching Ensures More Reliable TC = +25C 12m @ VGS = 10V 60A and Robust End Application 60V 50A 18m @ VGS = 4.5V Low On-Resistance L
Otros transistores... DMN63D8L , DMN63D8LW , DMN65D8LQ , DMN67D8L , DMN67D8LW , DMN7022LFGQ , DMNH4006SPSQ , DMNH6021SK3Q , IRF1405 , DMP1005UFDF , DMP1009UFDF , DMP1055USW , DMP10H400SE , DMP10H400SEQ , DMP10H4D2S , DMP1100UCB4 , DMP2003UPS .
History: G110N06K | 12N10G-S08-R | 10N70L-TF1-T | BLD6G21LS-50
History: G110N06K | 12N10G-S08-R | 10N70L-TF1-T | BLD6G21LS-50



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