DMP10H4D2S Todos los transistores

 

DMP10H4D2S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMP10H4D2S
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.44 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.27 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2.6 nS
   Cossⓘ - Capacitancia de salida: 5.6 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.2 Ohm
   Paquete / Cubierta: SOT23
 

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DMP10H4D2S Datasheet (PDF)

 ..1. Size:533K  diodes
 dmp10h4d2s.pdf pdf_icon

DMP10H4D2S

DMP10H4D2S 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage ID Low Input Capacitance BVDSS RDS(ON) TA = +25C Fast Switching Speed 4.2 @ VGS = -10V -0.27A Small Surface Mount Package -100V 5.0 @ VGS = -4.0V -0.24A ESD Protected up to 2KV (HBM) Totally Lead-Free & Fully RoHS Compliant

 7.1. Size:479K  diodes
 dmp10h400sk3.pdf pdf_icon

DMP10H4D2S

DMP10H400SK3 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(on) max TC = +25C Low Input Capacitance 240m @ VGS = -10V -9A -100V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -8A 300m @ VGS = -4.5V Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards

 7.2. Size:420K  diodes
 dmp10h400se.pdf pdf_icon

DMP10H4D2S

DMP10H400SE 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Gate Drive BVDSS RDS(ON) Max TA = +25C Low Input Capacitance Fast Switching Speed 250m @ VGS = -10V -2.3A -100V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 300m @ VGS = -4.5V -2.1A Halogen and Antimony Free. Green Device (Note 3)

 7.3. Size:404K  diodes
 dmp10h400seq.pdf pdf_icon

DMP10H4D2S

DMP10H400SEQ 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Gate Drive BVDSS RDS(ON) Max TA = +25C Low Input Capacitance Fast Switching Speed 250m @ VGS = -10V -2.3A -100V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 300m @ VGS = -4.5V -2.1A Halogen and Antimony Free. Green Device (Note 3)

MOSTRAR MÁS

Otros transistores... DMNH4006SPSQ , DMNH6021SK3Q , DMNH6042SSDQ , DMP1005UFDF , DMP1009UFDF , DMP1055USW , DMP10H400SE , DMP10H400SEQ , 2SK3918 , DMP1100UCB4 , DMP2003UPS , DMP2035UFDF , DMP2045U , DMP2088LCP3 , DMP2120U , DMP2123LQ , DMP2165UW .

History: HM85P02 | HM8N20

 

 
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