DMP10H4D2S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMP10H4D2S
   Código: P10
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.44 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.27 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 1.8 nC
   trⓘ - Tiempo de subida: 2.6 nS
   Cossⓘ - Capacitancia de salida: 5.6 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.2 Ohm
   Paquete / Cubierta: SOT23

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DMP10H4D2S Datasheet (PDF)

..1. Size:533K diodes
dmp10h4d2s.pdf

DMP10H4D2S 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage ID Low Input Capacitance BVDSS RDS(ON) TA = +25C Fast Switching Speed 4.2 @ VGS = -10V -0.27A Small Surface Mount Package -100V 5.0 @ VGS = -4.0V -0.24A ESD Protected up to 2KV (HBM) Totally Lead-Free & Fully RoHS Compliant

7.1. Size:479K diodes
dmp10h400sk3.pdf

DMP10H400SK3 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(on) max TC = +25C Low Input Capacitance 240m @ VGS = -10V -9A -100V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -8A 300m @ VGS = -4.5V Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards

7.2. Size:420K diodes
dmp10h400se.pdf

DMP10H400SE 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Gate Drive BVDSS RDS(ON) Max TA = +25C Low Input Capacitance Fast Switching Speed 250m @ VGS = -10V -2.3A -100V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 300m @ VGS = -4.5V -2.1A Halogen and Antimony Free. Green Device (Note 3)

7.3. Size:404K diodes
dmp10h400seq.pdf

DMP10H400SEQ 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Gate Drive BVDSS RDS(ON) Max TA = +25C Low Input Capacitance Fast Switching Speed 250m @ VGS = -10V -2.3A -100V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 300m @ VGS = -4.5V -2.1A Halogen and Antimony Free. Green Device (Note 3)

7.4. Size:266K inchange semiconductor
dmp10h400sk3.pdf

isc P-Channel MOSFET Transistor DMP10H400SK3FEATURESDrain Current I = -9A@ T =25D CDrain Source Voltage-: V = -100V(Min)DSSStatic Drain-Source On-Resistance: R = 240m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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