All MOSFET. DMP10H4D2S Datasheet

 

DMP10H4D2S MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMP10H4D2S
   Marking Code: P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 0.27 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.8 nC
   trⓘ - Rise Time: 2.6 nS
   Cossⓘ - Output Capacitance: 5.6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
   Package: SOT23

 DMP10H4D2S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMP10H4D2S Datasheet (PDF)

 ..1. Size:533K  diodes
dmp10h4d2s.pdf

DMP10H4D2S DMP10H4D2S

DMP10H4D2S 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage ID Low Input Capacitance BVDSS RDS(ON) TA = +25C Fast Switching Speed 4.2 @ VGS = -10V -0.27A Small Surface Mount Package -100V 5.0 @ VGS = -4.0V -0.24A ESD Protected up to 2KV (HBM) Totally Lead-Free & Fully RoHS Compliant

 7.1. Size:479K  diodes
dmp10h400sk3.pdf

DMP10H4D2S DMP10H4D2S

DMP10H400SK3 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(on) max TC = +25C Low Input Capacitance 240m @ VGS = -10V -9A -100V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -8A 300m @ VGS = -4.5V Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards

 7.2. Size:420K  diodes
dmp10h400se.pdf

DMP10H4D2S DMP10H4D2S

DMP10H400SE 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Gate Drive BVDSS RDS(ON) Max TA = +25C Low Input Capacitance Fast Switching Speed 250m @ VGS = -10V -2.3A -100V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 300m @ VGS = -4.5V -2.1A Halogen and Antimony Free. Green Device (Note 3)

 7.3. Size:404K  diodes
dmp10h400seq.pdf

DMP10H4D2S DMP10H4D2S

DMP10H400SEQ 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Gate Drive BVDSS RDS(ON) Max TA = +25C Low Input Capacitance Fast Switching Speed 250m @ VGS = -10V -2.3A -100V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 300m @ VGS = -4.5V -2.1A Halogen and Antimony Free. Green Device (Note 3)

 7.4. Size:266K  inchange semiconductor
dmp10h400sk3.pdf

DMP10H4D2S DMP10H4D2S

isc P-Channel MOSFET Transistor DMP10H400SK3FEATURESDrain Current I = -9A@ T =25D CDrain Source Voltage-: V = -100V(Min)DSSStatic Drain-Source On-Resistance: R = 240m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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