DMP2170U MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DMP2170U 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max BVDSS RDS(ON) max Low Input Capacitance TA = +25C Fast Switching Speed 90m @ VGS = -4.5V -3.1A Low Input/Output Leakage -20V 250m @ VGS = -2.5V -1.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony F

DMP2120U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max BVDSS RDS(ON) Max TA = +25C Low Input Capacitance Fast Switching Speed -3.8A 62m @ VGS = -4.5V Low Input/Output Leakage -20V 90m @ VGS = -2.5V -3.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Fr

DMP21D5UFB4P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(on) max Very Low Gate Threshold Voltage VGS(TH), 1.0V max TA = 25C Low Input Capacitance Fast Switching Speed 1.0 @ VGS = -4.5V -700mA Ultra-Small Surfaced Mount Package 1.5 @ VGS = -2.5V -600mA Ultra-low package profile, 0.4

DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID P-Channel MOSFET V(BR)DSS RDS(ON) TA = +25C Low On-Resistance 5 @ VGS = -4.5V -200mA Very Low Gate Threshold Voltage VGS(TH) -170mA 7 @ VGS = -2.5V Low Input Capacitance -20V 10 @ VGS = -1.8V -140mA Fast Switching Speed -50mA 15 @ VGS = -1.5V

DMP2130LP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low RDS(ON): Case: SOT-23 Case Material - Molded Plastic, Green Molding Compound. 75 m @VGS = -4.5V UL Flammability Rating 94V-0 110 m @VGS = -2.7V Moisture Sensitivity: Level 1 per J-STD-020D 12

DMP2165UW P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max BVDSS RDS(ON) max TA = +25 Low Input Capacitance C Fast Switching Speed 90m @VGS = -4.5V -2.5A -20V Low Input/Output Leakage 120m @VGS = -2.5V -2.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

A Product Line ofDiodes IncorporatedDMP21D0UT20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Footprint of just 3mm2 less than half the size of SOT23 ID Max 0.8mm profile ideal for low profile applications V(BR)DSS RDS(on) Max @ TA = 25C Low Gate Threshold Voltage (Note 4) Fast Switching Speed ESD Protected Gate

DMP21D5UFDP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID V(BR)DSS RDS(ON) max Package Very Low Gate Threshold Voltage VGS(TH), 1.0V max TA = +25C Low Input Capacitance 1.0 @ VGS = -4.5V -600mA Fast Switching Speed 1.5 @ VGS = -2.5V -500mA ESD Protected Gate -20V X1-DFN1212-3 2.0 @ VGS = -1.8V -400mA Tot

DMP2160UFDBDUAL P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: DFN2020B-6 70m @VGS = -4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 85m @VGS = -2.5V Moisture Sensitivity: Level 1 per J-STD-020

DMP210DUDJDUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual P-Channel MOSFET Case: SOT-963 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound.UL Flammability Classification Rating 94V-0 o 5.0 @ -4.5V o 7.0 @ -2.5V Moisture Sensitivity: Level 1 per J-STD-020 o 10 @ -1.8V Terminal Connections: See Diagra

DMP2100UP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(ON) MAX Package TA = +25C Low Input Capacitance 38m @ VGS = -10V -4.3A Fast Switching Speed -20V 43m @ VGS = -4.5V SOT23 -4.0A Low Input/Output Leakage 75m @ VGS = -2.5V -2.8A ESD Protected Up To 3kV Totally Lead-Free & Fully RoHS Compl

DMP2100UCB9 DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25C) Features and Benefits LD-MOS Technology with the Lowest Figure of Merit: VDSS RDS(on) Qg Qgd ID RDS(on) = 80m to Minimize On-State Losses -20V 80m 3.3nC 0.6nC -4A Qg = 3.3nC for Ultra-Fast Switching Vgs(th) = -0.7V typ. for a Low Turn-On Potential CSP with Footpr

DMP2123LQ P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low RDS(ON) Case: SOT23 - 72m @VGS = -4.5V Case Material - Molded Plastic, Green Molding Compound. - 108m @VGS = -2.7V UL Flammability Rating 94V-0 - 123m @VGS = -2.5V Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminals: Finish - M

DMP2104VP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data P-Channel MOSFET Case: SOT-563 Very Low On-Resistance Case Material: Molded Plastic, Green Molding Compound.UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Terminal

DMP2104LPP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data P-Channel MOSFET Case: DFN1411-3 Very Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capacitance Te

DMP2123LP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low RDS(ON): Case: SOT-23 Case Material - Molded Plastic, Green Molding Compound. 72 m @VGS = -4.5V UL Flammability Rating 94V-0 108 m @VGS = -2.7V Moisture Sensitivity: Level 1 per J-STD-020D 12

A Product Line ofDiodes IncorporatedDMP21D0UFD20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage ID max Fast Switching Speed V(BR)DSS RDS(on) Max TA = 25C (Notes 4) ESD Protected Gate 3KV 495m @ VGS = -4.5V -1.14A Totally Lead-Free & Fully RoHS compliant (Note 1) Halogen and Antimony Free. G

DMP21D0UFB4 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Footprint of just 0.6mm2 13 times smaller than SOT23 V(BR)DSS RDS(ON) ID @ TA = +25C 0.4mm Profile Ideal for Low Profile Applications -0.77A 495m @ VGS = -4.5V Low Gate Threshold Voltage -20V 690m @ VGS = -2.5V -0.67A Fast Switching Speed ESD Protected

DMP2130LDMP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low RDS(ON): Case: SOT-26 Case Material Molded Plastic. UL Flammability Rating 94V-0 80 m @VGS = -4.5V Moisture Sensitivity: Level 1 per J-STD-020D 110 m @VGS = -2.7V Terminals: Finish - Matte Tin

DMP213DUFA25V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.4mm Ultra Low Profile Package for Thin Application ID V(BR)DSS RDS(ON) 0.48mm2 Package Footprint, 16 Times Smaller than SOT23 TA = +25C 10 @ VGS = -4.5V -166mA Low VGS(th), Can be Driven Directly From a Battery -25V 13 @ VGS = -2.7V -138mA Low RDS(on) ESD Protected Gate

DMP21D2UFA 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Package Profile, 0.4mm Maximum Package Height ID max V(BR)DSS RDS(ON) max 0.48mm2 Package Footprint, 16 Times Smaller than SOT23 TA = +25C 1.0 @ VGS = -4.5V Low On-Resistance 1.2 @ VGS = -2.5V Very Low Gate Threshold Voltage, 1.0V max -20V -330mA 1.6 @ VG

DMP2160UP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max 80 m @ VGS = -4.5V TA = 25C 100 m @ VGS = -2.5V 80m @ VGS = -4.5V -3.2A 140 m @ VGS = -1.8V -20V Very Low Gate Threshold Voltage VGS(th) 1V 140m @ VGS = -1.8V -2.4A Low Input Capacitance Fast Swit

DMP2160UFDBQ DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX V(BR)DSS RDS(ON) max TA = +25C Low Gate Threshold Voltage, -0.9V Max -3.8A 70m @ VGS = -4.5V Fast Switching Speed -20V 85m @ VGS = -2.5V -3.3A Low Input/Output Leakage Low Profile, 0.5mm Max Height Totally Lead-Free & Fully RoHS Compli

DMP2160UWP-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-323 100 m @ VGS = -4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 120 m @ VGS = -2.5V Moisture Sensitivity: Level 1 per J-STD-020D

Product specificationDMP2130LP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low RDS(ON): Case: SOT23 Case Material - Molded Plastic, Green Molding Compound. 75 m @VGS = -4.5V UL Flammability Rating 94V-0 110 m @VGS = -2.7V Moisture Sensitivity: Level 1 per J-STD-020 125 m @VGS = -2.5V Terminals: Finish - Matte Tin anne

Product specificationDMP2123LP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low RDS(ON): Case: SOT-23 Case Material - Molded Plastic, Green Molding Compound. 72 m @VGS = -4.5V UL Flammability Rating 94V-0 108 m @VGS = -2.7V Moisture Sensitivity: Level 1 per J-STD-020D 123 m @VGS = -2.5V Terminals: Fin

Product specification DMP2160UWP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT323 100m @ VGS = -4.5V Case Material: Molded Plastic, Green Molding Compound. 120m @ VGS = -2.5V UL Flammability Classification Rating 94V-0 160m @ VGS = -1.8V Moisture Sensitivity: Level 1 per J-STD-020D Very Low Gate

TPDMP21 6 0UWP-Channel Enhancement-Mode MOS FETswww.sot23.com.twFeaturesApplications (typ) @VGS =4.5V. -20V, -2.3A, RDS(ON) =100m Battery protection RDS(ON) = 125m (typ) @VGS = 2.5V. Load switch Power management SOT-323 package. Ordering InformationPart Number Qty per Reel Reel SizeTPDMP2160UW 3000 7DSGSOT-323Absolute Maximum Ratings (TA=25C