DMP2170U Todos los transistores

 ..1. Size:370K  diodes
 dmp2170u.pdf

DMP2170U 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max BVDSS RDS(ON) max Low Input Capacitance TA = +25 C Fast Switching Speed 90m @ VGS = -4.5V -3.1A Low Input/Output Leakage -20V 250m @ VGS = -2.5V -1.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony F

 9.1. Size:362K  diodes
 dmp2120u.pdf

DMP2120U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max BVDSS RDS(ON) Max TA = +25 C Low Input Capacitance Fast Switching Speed -3.8A 62m @ VGS = -4.5V Low Input/Output Leakage -20V 90m @ VGS = -2.5V -3.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Fr

 9.2. Size:244K  diodes
 dmp21d5ufb4.pdf

DMP21D5UFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(on) max Very Low Gate Threshold Voltage VGS(TH), 1.0V max TA = 25 C Low Input Capacitance Fast Switching Speed 1.0 @ VGS = -4.5V -700mA Ultra-Small Surfaced Mount Package 1.5 @ VGS = -2.5V -600mA Ultra-low package profile, 0.4

 9.3. Size:400K  diodes
 dmp210dufb4.pdf

DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID P-Channel MOSFET V(BR)DSS RDS(ON) TA = +25 C Low On-Resistance 5 @ VGS = -4.5V -200mA Very Low Gate Threshold Voltage VGS(TH) -170mA 7 @ VGS = -2.5V Low Input Capacitance -20V 10 @ VGS = -1.8V -140mA Fast Switching Speed -50mA 15 @ VGS = -1.5V

 9.4. Size:160K  diodes
 dmp2130l.pdf

DMP2130L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low RDS(ON) Case SOT-23 Case Material - Molded Plastic, Green Molding Compound. 75 m @VGS = -4.5V UL Flammability Rating 94V-0 110 m @VGS = -2.7V Moisture Sensitivity Level 1 per J-STD-020D 12

 9.5. Size:419K  diodes
 dmp2165uw.pdf

 9.6. Size:164K  diodes
 dmp21d0ut.pdf

A Product Line of Diodes Incorporated DMP21D0UT 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Footprint of just 3mm2 less than half the size of SOT23 ID Max 0.8mm profile ideal for low profile applications V(BR)DSS RDS(on) Max @ TA = 25 C Low Gate Threshold Voltage (Note 4) Fast Switching Speed ESD Protected Gate

 9.7. Size:185K  diodes
 dmp21d5ufd.pdf

DMP21D5UFD P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID V(BR)DSS RDS(ON) max Package Very Low Gate Threshold Voltage VGS(TH), 1.0V max TA = +25 C Low Input Capacitance 1.0 @ VGS = -4.5V -600mA Fast Switching Speed 1.5 @ VGS = -2.5V -500mA ESD Protected Gate -20V X1-DFN1212-3 2.0 @ VGS = -1.8V -400mA Tot

 9.8. Size:143K  diodes
 dmp2160ufdb.pdf

DMP2160UFDB DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case DFN2020B-6 70m @VGS = -4.5V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 85m @VGS = -2.5V Moisture Sensitivity Level 1 per J-STD-020

 9.9. Size:440K  diodes
 dmp210dudj.pdf

DMP210DUDJ DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual P-Channel MOSFET Case SOT-963 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 o 5.0 @ -4.5V o 7.0 @ -2.5V Moisture Sensitivity Level 1 per J-STD-020 o 10 @ -1.8V Terminal Connections See Diagra

 9.10. Size:193K  diodes
 dmp2100u.pdf

DMP2100U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(ON) MAX Package TA = +25 C Low Input Capacitance 38m @ VGS = -10V -4.3A Fast Switching Speed -20V 43m @ VGS = -4.5V SOT23 -4.0A Low Input/Output Leakage 75m @ VGS = -2.5V -2.8A ESD Protected Up To 3kV Totally Lead-Free & Fully RoHS Compl

 9.11. Size:422K  diodes
 dmp2100ucb9.pdf

DMP2100UCB9 DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25 C) Features and Benefits LD-MOS Technology with the Lowest Figure of Merit VDSS RDS(on) Qg Qgd ID RDS(on) = 80m to Minimize On-State Losses -20V 80m 3.3nC 0.6nC -4A Qg = 3.3nC for Ultra-Fast Switching Vgs(th) = -0.7V typ. for a Low Turn-On Potential CSP with Footpr

 9.12. Size:488K  diodes
 dmp2123lq.pdf

DMP2123LQ P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low RDS(ON) Case SOT23 - 72m @VGS = -4.5V Case Material - Molded Plastic, Green Molding Compound. - 108m @VGS = -2.7V UL Flammability Rating 94V-0 - 123m @VGS = -2.5V Moisture Sensitivity Level 1 per J-STD-020 Low Input/Output Leakage Terminals Finish - M

 9.13. Size:178K  diodes
 dmp2104v.pdf

DMP2104V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data P-Channel MOSFET Case SOT-563 Very Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage Moisture Sensitivity Level 1 per J-STD-020 Low Input Capacitance Terminal

 9.14. Size:317K  diodes
 dmp2104lp.pdf

DMP2104LP P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data P-Channel MOSFET Case DFN1411-3 Very Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage Moisture Sensitivity Level 1 per J-STD-020C Low Input Capacitance Te

 9.15. Size:163K  diodes
 dmp2123l.pdf

DMP2123L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low RDS(ON) Case SOT-23 Case Material - Molded Plastic, Green Molding Compound. 72 m @VGS = -4.5V UL Flammability Rating 94V-0 108 m @VGS = -2.7V Moisture Sensitivity Level 1 per J-STD-020D 12

 9.16. Size:230K  diodes
 dmp21d0ufd.pdf

A Product Line of Diodes Incorporated DMP21D0UFD 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage ID max Fast Switching Speed V(BR)DSS RDS(on) Max TA = 25 C (Notes 4) ESD Protected Gate 3KV 495m @ VGS = -4.5V -1.14A Totally Lead-Free & Fully RoHS compliant (Note 1) Halogen and Antimony Free. G

 9.17. Size:394K  diodes
 dmp21d0ufb4.pdf

DMP21D0UFB4 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Footprint of just 0.6mm2 13 times smaller than SOT23 V(BR)DSS RDS(ON) ID @ TA = +25 C 0.4mm Profile Ideal for Low Profile Applications -0.77A 495m @ VGS = -4.5V Low Gate Threshold Voltage -20V 690m @ VGS = -2.5V -0.67A Fast Switching Speed ESD Protected

 9.18. Size:162K  diodes
 dmp2130ldm.pdf

DMP2130LDM P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low RDS(ON) Case SOT-26 Case Material Molded Plastic. UL Flammability Rating 94V-0 80 m @VGS = -4.5V Moisture Sensitivity Level 1 per J-STD-020D 110 m @VGS = -2.7V Terminals Finish - Matte Tin

 9.19. Size:270K  diodes
 dmp213dufa.pdf

DMP213DUFA 25V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.4mm Ultra Low Profile Package for Thin Application ID V(BR)DSS RDS(ON) 0.48mm2 Package Footprint, 16 Times Smaller than SOT23 TA = +25 C 10 @ VGS = -4.5V -166mA Low VGS(th), Can be Driven Directly From a Battery -25V 13 @ VGS = -2.7V -138mA Low RDS(on) ESD Protected Gate

 9.20. Size:342K  diodes
 dmp21d2ufa.pdf

DMP21D2UFA 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Package Profile, 0.4mm Maximum Package Height ID max V(BR)DSS RDS(ON) max 0.48mm2 Package Footprint, 16 Times Smaller than SOT23 TA = +25 C 1.0 @ VGS = -4.5V Low On-Resistance 1.2 @ VGS = -2.5V Very Low Gate Threshold Voltage, 1.0V max -20V -330mA 1.6 @ VG

 9.21. Size:128K  diodes
 dmp2160u.pdf

DMP2160U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max 80 m @ VGS = -4.5V TA = 25 C 100 m @ VGS = -2.5V 80m @ VGS = -4.5V -3.2A 140 m @ VGS = -1.8V -20V Very Low Gate Threshold Voltage VGS(th) 1V 140m @ VGS = -1.8V -2.4A Low Input Capacitance Fast Swit

 9.22. Size:332K  diodes
 dmp2160ufdbq.pdf

DMP2160UFDBQ DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX V(BR)DSS RDS(ON) max TA = +25 C Low Gate Threshold Voltage, -0.9V Max -3.8A 70m @ VGS = -4.5V Fast Switching Speed -20V 85m @ VGS = -2.5V -3.3A Low Input/Output Leakage Low Profile, 0.5mm Max Height Totally Lead-Free & Fully RoHS Compli

 9.23. Size:126K  diodes
 dmp2160uw.pdf

 9.24. Size:74K  tysemi
 dmp2130l.pdf

Product specification DMP2130L P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low RDS(ON) Case SOT23 Case Material - Molded Plastic, Green Molding Compound. 75 m @VGS = -4.5V UL Flammability Rating 94V-0 110 m @VGS = -2.7V Moisture Sensitivity Level 1 per J-STD-020 125 m @VGS = -2.5V Terminals Finish - Matte Tin anne

 9.25. Size:131K  tysemi
 dmp2123l.pdf

Product specification DMP2123L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low RDS(ON) Case SOT-23 Case Material - Molded Plastic, Green Molding Compound. 72 m @VGS = -4.5V UL Flammability Rating 94V-0 108 m @VGS = -2.7V Moisture Sensitivity Level 1 per J-STD-020D 123 m @VGS = -2.5V Terminals Fin

 9.26. Size:185K  tysemi
 dmp2160uw.pdf

Product specification DMP2160UW P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SOT323 100m @ VGS = -4.5V Case Material Molded Plastic, Green Molding Compound. 120m @ VGS = -2.5V UL Flammability Classification Rating 94V-0 160m @ VGS = -1.8V Moisture Sensitivity Level 1 per J-STD-020D Very Low Gate

 9.27. Size:2500K  cn tech public
 tpdmp2160uw.pdf

TPDMP21 6 0UW P-Channel Enhancement-Mode MOS FETs www.sot23.com.tw Features Applications (typ) @VGS =4.5V. -20V, -2.3A, RDS(ON) =100m Battery protection RDS(ON) = 125m (typ) @VGS = 2.5V. Load switch Power management SOT-323 package. Ordering Information Part Number Qty per Reel Reel Size TPDMP2160UW 3000 7 D S G SOT-323 Absolute Maximum Ratings (TA=25 C

 9.28. Size:1961K  cn tech public
 dmp21d0ufb4-p.pdf