DMP2170U MOSFET. Datasheet pdf. Equivalent

   Type Designator: DMP2170U
   Marking Code: 7U
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.25 V
   |Id|ⓘ - Maximum Drain Current: 3.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.8 nC
   trⓘ - Rise Time: 18.3 nS
   Cossⓘ - Output Capacitance: 46 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: SOT23

DMP2170U Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS

DMP2170U Datasheet (PDF)

..1. Size:370K diodes
dmp2170u.pdf pdf_icon

DMP2170U 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max BVDSS RDS(ON) max Low Input Capacitance TA = +25C Fast Switching Speed 90m @ VGS = -4.5V -3.1A Low Input/Output Leakage -20V 250m @ VGS = -2.5V -1.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony F

9.1. Size:362K diodes
dmp2120u.pdf pdf_icon

DMP2120U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max BVDSS RDS(ON) Max TA = +25C Low Input Capacitance Fast Switching Speed -3.8A 62m @ VGS = -4.5V Low Input/Output Leakage -20V 90m @ VGS = -2.5V -3.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Fr

9.2. Size:244K diodes
dmp21d5ufb4.pdf pdf_icon

DMP21D5UFB4P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(on) max Very Low Gate Threshold Voltage VGS(TH), 1.0V max TA = 25C Low Input Capacitance Fast Switching Speed 1.0 @ VGS = -4.5V -700mA Ultra-Small Surfaced Mount Package 1.5 @ VGS = -2.5V -600mA Ultra-low package profile, 0.4

9.3. Size:400K diodes
dmp210dufb4.pdf pdf_icon

DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID P-Channel MOSFET V(BR)DSS RDS(ON) TA = +25C Low On-Resistance 5 @ VGS = -4.5V -200mA Very Low Gate Threshold Voltage VGS(TH) -170mA 7 @ VGS = -2.5V Low Input Capacitance -20V 10 @ VGS = -1.8V -140mA Fast Switching Speed -50mA 15 @ VGS = -1.5V

9.4. Size:160K diodes
dmp2130l.pdf pdf_icon

DMP2130LP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low RDS(ON): Case: SOT-23 Case Material - Molded Plastic, Green Molding Compound. 75 m @VGS = -4.5V UL Flammability Rating 94V-0 110 m @VGS = -2.7V Moisture Sensitivity: Level 1 per J-STD-020D 12

9.5. Size:419K diodes
dmp2165uw.pdf pdf_icon

DMP2165UW P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max BVDSS RDS(ON) max TA = +25 Low Input Capacitance C Fast Switching Speed 90m @VGS = -4.5V -2.5A -20V Low Input/Output Leakage 120m @VGS = -2.5V -2.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

9.6. Size:164K diodes
dmp21d0ut.pdf pdf_icon

A Product Line ofDiodes IncorporatedDMP21D0UT20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Footprint of just 3mm2 less than half the size of SOT23 ID Max 0.8mm profile ideal for low profile applications V(BR)DSS RDS(on) Max @ TA = 25C Low Gate Threshold Voltage (Note 4) Fast Switching Speed ESD Protected Gate

9.7. Size:185K diodes
dmp21d5ufd.pdf pdf_icon

DMP21D5UFDP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID V(BR)DSS RDS(ON) max Package Very Low Gate Threshold Voltage VGS(TH), 1.0V max TA = +25C Low Input Capacitance 1.0 @ VGS = -4.5V -600mA Fast Switching Speed 1.5 @ VGS = -2.5V -500mA ESD Protected Gate -20V X1-DFN1212-3 2.0 @ VGS = -1.8V -400mA Tot

9.8. Size:143K diodes
dmp2160ufdb.pdf pdf_icon

DMP2160UFDBDUAL P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: DFN2020B-6 70m @VGS = -4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 85m @VGS = -2.5V Moisture Sensitivity: Level 1 per J-STD-020

9.9. Size:440K diodes
dmp210dudj.pdf pdf_icon

DMP210DUDJDUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual P-Channel MOSFET Case: SOT-963 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound.UL Flammability Classification Rating 94V-0 o 5.0 @ -4.5V o 7.0 @ -2.5V Moisture Sensitivity: Level 1 per J-STD-020 o 10 @ -1.8V Terminal Connections: See Diagra

9.10. Size:193K diodes
dmp2100u.pdf pdf_icon

DMP2100UP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(ON) MAX Package TA = +25C Low Input Capacitance 38m @ VGS = -10V -4.3A Fast Switching Speed -20V 43m @ VGS = -4.5V SOT23 -4.0A Low Input/Output Leakage 75m @ VGS = -2.5V -2.8A ESD Protected Up To 3kV Totally Lead-Free & Fully RoHS Compl

9.11. Size:422K diodes
dmp2100ucb9.pdf pdf_icon

DMP2100UCB9 DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25C) Features and Benefits LD-MOS Technology with the Lowest Figure of Merit: VDSS RDS(on) Qg Qgd ID RDS(on) = 80m to Minimize On-State Losses -20V 80m 3.3nC 0.6nC -4A Qg = 3.3nC for Ultra-Fast Switching Vgs(th) = -0.7V typ. for a Low Turn-On Potential CSP with Footpr

9.12. Size:488K diodes
dmp2123lq.pdf pdf_icon

DMP2123LQ P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low RDS(ON) Case: SOT23 - 72m @VGS = -4.5V Case Material - Molded Plastic, Green Molding Compound. - 108m @VGS = -2.7V UL Flammability Rating 94V-0 - 123m @VGS = -2.5V Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminals: Finish - M

9.13. Size:178K diodes
dmp2104v.pdf pdf_icon

DMP2104VP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data P-Channel MOSFET Case: SOT-563 Very Low On-Resistance Case Material: Molded Plastic, Green Molding Compound.UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Terminal

9.14. Size:317K diodes
dmp2104lp.pdf pdf_icon

DMP2104LPP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data P-Channel MOSFET Case: DFN1411-3 Very Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capacitance Te

9.15. Size:163K diodes
dmp2123l.pdf pdf_icon

DMP2123LP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low RDS(ON): Case: SOT-23 Case Material - Molded Plastic, Green Molding Compound. 72 m @VGS = -4.5V UL Flammability Rating 94V-0 108 m @VGS = -2.7V Moisture Sensitivity: Level 1 per J-STD-020D 12

9.16. Size:230K diodes
dmp21d0ufd.pdf pdf_icon

A Product Line ofDiodes IncorporatedDMP21D0UFD20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage ID max Fast Switching Speed V(BR)DSS RDS(on) Max TA = 25C (Notes 4) ESD Protected Gate 3KV 495m @ VGS = -4.5V -1.14A Totally Lead-Free & Fully RoHS compliant (Note 1) Halogen and Antimony Free. G

9.17. Size:394K diodes
dmp21d0ufb4.pdf pdf_icon

DMP21D0UFB4 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Footprint of just 0.6mm2 13 times smaller than SOT23 V(BR)DSS RDS(ON) ID @ TA = +25C 0.4mm Profile Ideal for Low Profile Applications -0.77A 495m @ VGS = -4.5V Low Gate Threshold Voltage -20V 690m @ VGS = -2.5V -0.67A Fast Switching Speed ESD Protected

9.18. Size:162K diodes
dmp2130ldm.pdf pdf_icon

DMP2130LDMP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low RDS(ON): Case: SOT-26 Case Material Molded Plastic. UL Flammability Rating 94V-0 80 m @VGS = -4.5V Moisture Sensitivity: Level 1 per J-STD-020D 110 m @VGS = -2.7V Terminals: Finish - Matte Tin

9.19. Size:270K diodes
dmp213dufa.pdf pdf_icon

DMP213DUFA25V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.4mm Ultra Low Profile Package for Thin Application ID V(BR)DSS RDS(ON) 0.48mm2 Package Footprint, 16 Times Smaller than SOT23 TA = +25C 10 @ VGS = -4.5V -166mA Low VGS(th), Can be Driven Directly From a Battery -25V 13 @ VGS = -2.7V -138mA Low RDS(on) ESD Protected Gate

9.20. Size:342K diodes
dmp21d2ufa.pdf pdf_icon

DMP21D2UFA 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Package Profile, 0.4mm Maximum Package Height ID max V(BR)DSS RDS(ON) max 0.48mm2 Package Footprint, 16 Times Smaller than SOT23 TA = +25C 1.0 @ VGS = -4.5V Low On-Resistance 1.2 @ VGS = -2.5V Very Low Gate Threshold Voltage, 1.0V max -20V -330mA 1.6 @ VG

9.21. Size:128K diodes
dmp2160u.pdf pdf_icon

DMP2160UP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max 80 m @ VGS = -4.5V TA = 25C 100 m @ VGS = -2.5V 80m @ VGS = -4.5V -3.2A 140 m @ VGS = -1.8V -20V Very Low Gate Threshold Voltage VGS(th) 1V 140m @ VGS = -1.8V -2.4A Low Input Capacitance Fast Swit

9.22. Size:332K diodes
dmp2160ufdbq.pdf pdf_icon

DMP2160UFDBQ DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX V(BR)DSS RDS(ON) max TA = +25C Low Gate Threshold Voltage, -0.9V Max -3.8A 70m @ VGS = -4.5V Fast Switching Speed -20V 85m @ VGS = -2.5V -3.3A Low Input/Output Leakage Low Profile, 0.5mm Max Height Totally Lead-Free & Fully RoHS Compli

9.23. Size:126K diodes
dmp2160uw.pdf pdf_icon

DMP2160UWP-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-323 100 m @ VGS = -4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 120 m @ VGS = -2.5V Moisture Sensitivity: Level 1 per J-STD-020D

9.24. Size:74K tysemi
dmp2130l.pdf pdf_icon

Product specificationDMP2130LP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low RDS(ON): Case: SOT23 Case Material - Molded Plastic, Green Molding Compound. 75 m @VGS = -4.5V UL Flammability Rating 94V-0 110 m @VGS = -2.7V Moisture Sensitivity: Level 1 per J-STD-020 125 m @VGS = -2.5V Terminals: Finish - Matte Tin anne

9.25. Size:131K tysemi
dmp2123l.pdf pdf_icon

Product specificationDMP2123LP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low RDS(ON): Case: SOT-23 Case Material - Molded Plastic, Green Molding Compound. 72 m @VGS = -4.5V UL Flammability Rating 94V-0 108 m @VGS = -2.7V Moisture Sensitivity: Level 1 per J-STD-020D 123 m @VGS = -2.5V Terminals: Fin

9.26. Size:185K tysemi
dmp2160uw.pdf pdf_icon

Product specification DMP2160UWP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT323 100m @ VGS = -4.5V Case Material: Molded Plastic, Green Molding Compound. 120m @ VGS = -2.5V UL Flammability Classification Rating 94V-0 160m @ VGS = -1.8V Moisture Sensitivity: Level 1 per J-STD-020D Very Low Gate

9.27. Size:2500K cn tech public
tpdmp2160uw.pdf pdf_icon

TPDMP21 6 0UWP-Channel Enhancement-Mode MOS FETswww.sot23.com.twFeaturesApplications (typ) @VGS =4.5V. -20V, -2.3A, RDS(ON) =100m Battery protection RDS(ON) = 125m (typ) @VGS = 2.5V. Load switch Power management SOT-323 package. Ordering InformationPart Number Qty per Reel Reel SizeTPDMP2160UW 3000 7DSGSOT-323Absolute Maximum Ratings (TA=25C

9.28. Size:1961K cn tech public
dmp21d0ufb4-p.pdf pdf_icon

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

LIST

Last Update

All MOSFET. DMP2170U Datasheet

DMP2170U MOSFET. Datasheet pdf. Equivalent

DMP2170U Datasheet (PDF)

LIST

Last Update

AllTransistors(C)