BRD4N70 Todos los transistores

 

BRD4N70 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BRD4N70
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 70 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm
   Paquete / Cubierta: TO-252

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BRD4N70 Datasheet (PDF)

 ..1. Size:808K  blue-rocket-elect
brd4n70.pdf

BRD4N70
BRD4N70

BRD4N70 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications These devices are well suited for po

 9.1. Size:700K  blue-rocket-elect
brd4n60.pdf

BRD4N70
BRD4N70

BRD4N60(BRCS4N60D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high

 9.2. Size:438K  blue-rocket-elect
brd4n65.pdf

BRD4N70
BRD4N70

BRD4N65 Rev.F Aug.-2017 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications These devices are well suited for po

 9.3. Size:981K  blue-rocket-elect
brd4n65s.pdf

BRD4N70
BRD4N70

BRD4N65S Rev.A Dec.-2023 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,, Low gate charge, low crss, fast switching,HF Product. Have good Electromagnetic Interference porfo

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