BRD4N70 Specs and Replacement
Type Designator: BRD4N70
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
Package: TO-252
BRD4N70 substitution
- MOSFET ⓘ Cross-Reference Search
BRD4N70 datasheet
brd4n70.pdf
BRD4N70 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications These devices are well suited for po... See More ⇒
brd4n60.pdf
BRD4N60(BRCS4N60D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high... See More ⇒
brd4n65.pdf
BRD4N65 Rev.F Aug.-2017 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications These devices are well suited for po... See More ⇒
brd4n65s.pdf
BRD4N65S Rev.A Dec.-2023 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features , , , Low gate charge, low crss, fast switching,HF Product. Have good Electromagnetic Interference porfo... See More ⇒
Detailed specifications: BRCS70N08IP, BRCS80N03DP, BRCS90P03RA, BRCS9435SC, BRCS9926SC, BRD100N03, BRD15N10, BRD30P06, IRFP250N, BRD50P06, BRD70N08, BRD840, BRF5N65, BRFL10N60, BRFL10N65, BRFL12N60, BRFL12N65
Keywords - BRD4N70 MOSFET specs
BRD4N70 cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SI2301CDS | CMD20N06L | ELM34423AA | HM1207E
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