All MOSFET. BRD4N70 Datasheet

 

BRD4N70 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BRD4N70
   Marking Code: BR4N70
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
   Package: TO-252

 BRD4N70 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BRD4N70 Datasheet (PDF)

 ..1. Size:808K  blue-rocket-elect
brd4n70.pdf

BRD4N70
BRD4N70

BRD4N70 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications These devices are well suited for po

 9.1. Size:700K  blue-rocket-elect
brd4n60.pdf

BRD4N70
BRD4N70

BRD4N60(BRCS4N60D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high

 9.2. Size:438K  blue-rocket-elect
brd4n65.pdf

BRD4N70
BRD4N70

BRD4N65 Rev.F Aug.-2017 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications These devices are well suited for po

 9.3. Size:981K  blue-rocket-elect
brd4n65s.pdf

BRD4N70
BRD4N70

BRD4N65S Rev.A Dec.-2023 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,, Low gate charge, low crss, fast switching,HF Product. Have good Electromagnetic Interference porfo

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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