2312 Todos los transistores

 

2312 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2312
   Código: 2312
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 1.25 W
   Voltaje máximo drenador - fuente |Vds|: 20 V
   Voltaje máximo fuente - puerta |Vgs|: 10 V
   Corriente continua de drenaje |Id|: 6.8 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 0.9 V
   Carga de la puerta (Qg): 10 nC
   Tiempo de subida (tr): 18 nS
   Conductancia de drenaje-sustrato (Cd): 300 pF
   Resistencia entre drenaje y fuente RDS(on): 0.021 Ohm
   Paquete / Cubierta: SOT-23

 Búsqueda de reemplazo de MOSFET 2312

 

2312 Datasheet (PDF)

 ..1. Size:1632K  goford
2312.pdf

2312
2312

2312GOFORDDescription DThe 2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 6.8A RDS(ON) @ VGS=2.5V =18m (TYP)RDS(ON) @ VGS=4.5V (TY

 0.1. Size:106K  toshiba
rn2312-rn2313.pdf

2312
2312

RN2312,RN2313 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2312,RN2313 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1312, RN1313 Equivalent Circuit Maximum Ratings (Ta = 25C)

 0.2. Size:390K  toshiba
2sk2312.pdf

2312
2312

2SK2312 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2312 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON resistance : RDS (ON) = 13 m (typ.) High forward transfer admittance : |Yfs| = 40 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 60 V) Enhancement mode :

 0.3. Size:126K  vishay
si2312cds.pdf

2312
2312

New ProductSi2312CDSVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.0318 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.0356 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.0414 at VGS = 1.8 V 5.6APPLI

 0.4. Size:213K  vishay
si2312bds.pdf

2312
2312

Si2312BDSVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.031 at VGS = 4.5 V 5.0 TrenchFET Power MOSFET20 0.037 at VGS = 2.5 V 4.6 7.5 100 % Rg Tested0.047 at VGS = 1.8 V 4.1 Compliant to RoHS Directive 2002/95/ECTO-236(SOT-23)G 13 DS 2

 0.5. Size:85K  vishay
si2312ds.pdf

2312
2312

Si2312DSVishay SiliconixN-Channel 20 -V (D-S) MOSFETFEATURESPRODUCT SUMMARYD 1.8-V RatedD RoHS CompliantVDS (V) rDS(on) (W) ID (A) Qg (Typ)Pb-free0.033 @ VGS = 4.5 V 4.9Available0.040 @ VGS = 2.5 V 4.420 11.20.051 @ VGS = 1.8 V 3.9TO-236(SOT-23)G 13 DS 2Top ViewSi2312DS (C2)**Marking CodeOrdering Information: Si2312DS-T1Si2312DS-T1E3 (Lead (Pb)-F

 0.6. Size:900K  mcc
si2312b.pdf

2312
2312

SI2312BFeatures High Power and Current Handing Capability Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"N-Channel MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)Maximum RatingsOperating Junction Temperature Range: -55

 0.7. Size:433K  panasonic
mtm23123.pdf

2312
2312

MTM23123Silicon P-channel MOSFETFor switching Overview PackageMTM23123 is P-channel MOS FET for load switch circuits. Code SMini3-G1-B Features Pin Name Low voltage drive (2.5 V, 4 V) 1: Gate Realization of low on-resistance, using extremely fine process 2: Source Contributes to miniaturization of sets, reduction of component count. 3: Drain E

 0.8. Size:155K  utc
ut2312.pdf

2312
2312

UNISONIC TECHNOLOGIES CO., LTD UT2312 Power MOSFET 20V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UT2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 33 m @VGS = 4.5 V * RDS(ON) = 40 m @VGS = 2

 0.9. Size:120K  taiwansemi
tsm2312.pdf

2312
2312

 0.10. Size:213K  taiwansemi
tsm2312cx.pdf

2312
2312

TSM2312 20V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 2. Source 33 @ VGS = 4.5V 4.9 3. Drain 20 40 @ VGS = 2.5V 4.4 51 @ VGS = 1.8V 3.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering In

 0.11. Size:294K  jiangsu
cj2312.pdf

2312
2312

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2312 N-Channel 20-V(D-S) MOSFET SOT-23 APPLICATIONS DC/DC Converters Load Switching for Portable Applications 1. GATE 2. SOURCE 3. DRAIN MARKING: S12 Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value UnitDrain-Source Voltage VDS 20 V Gate-Source Volt

 0.12. Size:1882K  htsemi
si2312.pdf

2312
2312

SI231220V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A

 0.13. Size:275K  cet
ces2312.pdf

2312
2312

CES2312N-Channel Enhancement Mode Field Effect TransistorFEATURES20V, 4.5A, RDS(ON) = 33m @VGS = 4.5V. RDS(ON) = 40m @VGS = 2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Vo

 0.14. Size:858K  wietron
wtc2312.pdf

2312
2312

WTC2312N-Channel Enhancement 3 DRAINDRAIN CURRENTMode Power MOSFET4.9 AMPERES P b Lead(Pb)-FreeDRAIN SOUCE VOLTAGE20 VOLTAGE1 GATEFeatures:* Super High Dense Cell Design For Low RDS(ON)2 SOURCE RDS(ON)

 0.15. Size:426K  willas
se2312.pdf

2312
2312

FM120-M WILLASTHRUSE2312 SOT-23 Plastic-Encapsulate MOSFETSFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimiz

 0.16. Size:68K  ape
ap2312gn.pdf

2312
2312

AP2312GNPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Lower on-resistance RDS(ON) 50mD Surface mount package ID 4.3ASSOT-23GDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible o

 0.17. Size:290K  analog power
am2312n.pdf

2312
2312

Analog Power AM2312NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)10 @ VGS = 4.5V9.4 Low thermal impedance 2013 @ VGS = 2.5V8.2 Fast switching speed Typical Applications: SOT-23 Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATIN

 0.18. Size:549K  alfa-mos
afn2312.pdf

2312
2312

AFN2312 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2312, N-Channel enhancement mode 20V/4.0A,RDS(ON)=36m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=40m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=52m@VGS=1.8V These devices are particularly suited for low Supe

 0.19. Size:681K  alfa-mos
afn2312a.pdf

2312
2312

AFN2312A Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2312A, N-Channel enhancement mode 20V/2.8A,RDS(ON)=45m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/2.2A,RDS(ON)=48m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.8A,RDS(ON)=64m@VGS=1.8V These devices are particularly suited for low Su

 0.20. Size:304K  shenzhen
si2312.pdf

2312
2312

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2312PRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A) Qg (Typ)0.031 @ VGS = 4.5 V 5.00.037 @ VGS = 2.5 V 4.620 7.50.047 @ VGS = 1.8 V 4.1(SOT-23)G 13 DOrdering Information: Si2312S 2Top ViewABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol 5 sec Steady State UnitDrain-Source Voltage VDS 20V

 0.21. Size:281K  silikron
ssf2312.pdf

2312
2312

SSF2312DDESCRIPTION The SSF2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES D VDS = 20V,ID = 4.5A 3RDS(ON)

 0.22. Size:690K  lrc
ln2312lt1g s-ln2312lt1g.pdf

2312
2312

LESHAN RADIO COMPANY, LTD.20V N-Channel Enhancement-Mode MOSFET VDS= 20V LN2312LT1GRDS(ON), Vgs@4.5V, Ids@5.0A = 41m S-LN2312LT1GRDS(ON), Vgs@2.5V, Ids@4.5A = 47m Features 3Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance 1we declare that the material of product 2compliance with RoHS requirements.SOT 23 (TO236AB)

 0.23. Size:257K  sino
sm2312nsa.pdf

2312
2312

SM2312NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/3A,D RDS(ON)=72m (max.) @ VGS=10VS RDS(ON)=100m (max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-3(RoHS Compliant)DApplicationsG DC-DC Conversion. Load Switch for PC fields.S Load Switch for Portables.N-Channel MOSFETOrdering and Marki

 0.24. Size:648K  first silicon
ftk2312.pdf

2312
2312

SEMICONDUCTORFTK2312TECHNICAL DATA DDESCRIPTIONThe FTK2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagramGENERAL FEATURES D VDS = 20V,ID = 4.5A 3RDS(ON)

 0.25. Size:205K  kexin
ki2312.pdf

2312
2312

SMD Type MOSFETN-Channel Enhancement MOSFET KI2312 Features3 VDS (V) = 20V ID = 4.9 A (VGS =4.5V) RDS(ON) 33m (VGS = 4.5V)12 RDS(ON) 40m (VGS = 2.5V) RDS(ON) 51m (VGS = 1.8V) Absolute Maximum Ratings Ta = 25 Parameter Symbo

 0.26. Size:1696K  kexin
si2312ds-3.pdf

2312
2312

SMD Type MOSFETN-Channel Enhancement MOSFET SI2312DS (KI2312DS)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features3 VDS (V) = 20V ID = 4.9 A (VGS =4.5V) RDS(ON) 33m (VGS = 4.5V)1 2 RDS(ON) 40m (VGS = 2.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 51m (VGS = 1.8V)G 13 D1. Gate2. SourceS 23. Drain

 0.27. Size:1794K  kexin
si2312 ki2312.pdf

2312
2312

SMD Type MOSFETN-Channel Enhancement MOSFET SI2312 (KI2312)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features3 VDS (V) = 20V ID = 4.9 A (VGS =4.5V) RDS(ON) 33m (VGS = 4.5V)1 2 RDS(ON) 40m (VGS = 2.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 51m (VGS = 1.8V)G 13 D1. Gate2. SourceS 23. Drain Abs

 0.28. Size:49K  kexin
ki2312ds.pdf

2312
2312

SMD Type TransistorsN-Channel 20 -V (D-S) MOSFETKI2312DSSOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13Features1.8-V RatedRoHS Compliant12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol 5 sec Steady State UnitDrain-Source Voltage VDS 20 VGate-Source Voltage VGS 8

 0.29. Size:1660K  kexin
si2312ds.pdf

2312
2312

SMD Type MOSFETN-Channel Enhancement MOSFET SI2312DS (KI2312DS)SOT-23Unit: mm Features+0.12.9-0.1+0.10.4 -0.1 VDS (V) = 20V3 ID = 4.9 A (VGS =4.5V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 40m (VGS = 2.5V)1 2 RDS(ON) 51m (VGS = 1.8V) +0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.1G 11.Gate3 D2.SourceS 23.Drain Abs

 0.30. Size:247K  chenmko
cht2312gp.pdf

2312
2312

CHENMKO ENTERPRISE CO.,LTDCHT2312GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 4.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat

 0.31. Size:1189K  globaltech semi
gsm2312.pdf

2312
2312

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2312, N-Channel enhancement mode 20V/4.0A,RDS(ON)=36m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A,RDS(ON)=40m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=52m@VGS=1.8V These devices are particularly suited for low Super high density cell design for e

 0.32. Size:1178K  globaltech semi
gsm2312a.pdf

2312
2312

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2312A, N-Channel enhancement mode 20V/2.8A,RDS(ON)=45m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/2.2A,RDS(ON)=48m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.8A,RDS(ON)=64m@VGS=1.8V These devices are particularly suited for low Super high density cell design for

 0.33. Size:1135K  matsuki electric
me2312 me2312-g.pdf

2312
2312

ME2312/ME2312-G N-Channel 20-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2312-G is the N-Channel logic enhancement mode power RDS(ON)33m@VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)40m@VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON)51m@VGS=1.8V minimize on-state resist

 0.34. Size:147K  m-mos
mmn2312.pdf

2312
2312

MMN2312Data SheetM-MOS Semiconductor Hong Kong Limited20V N-Channel Enhancement-Mode MOSFETVDS= 20VRDS(ON), Vgs@4.5V, Ids@5.0A = 31mRDS(ON), Vgs@2.5V, Ids@4.5A = 37mRDS(ON), Vgs@1.8V, Ids@4.0A = 47mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOT -23 Internal Schematic DiagramDrain Gate Source Top View N-Cha

 0.35. Size:318K  ncepower
nce2312x.pdf

2312
2312

http://www.ncepower.com NCE2312XNCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE2312X uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or bi-directional load switch. SGeneral Features Schematic diagram VDS = 20V,ID = 6A

 0.36. Size:243K  ncepower
nce2312a.pdf

2312
2312

Pb Free Producthttp://www.ncepower.com NCE2312ANCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE2312A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram General Features

 0.37. Size:287K  ncepower
nce2312.pdf

2312
2312

Pb Free Producthttp://www.ncepower.com NCE2312NCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features

 0.38. Size:395K  potens
pdn2312s.pdf

2312
2312

20V N-Channel MOSFETs PDN2312S General Description BVDSS RDSON IDThese N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 19m 6.7A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 20V, 6.7A, RDS(ON)=19m@VGS=4.5V performance, and withstand high ener

 0.39. Size:310K  silicon standard
ssm2312gn.pdf

2312
2312

SSM2312GNN-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS 20VDSimple drive requirement R 50mDS(ON)Fast switching ID 4.3AGPb-free; RoHS compliant.SDESCRIPTIONDThe SSM2312GN is in a SOT-23-3 package, which is widely used for lowerpower commercial and industrial surface mount applications. This device is Ssuitable for low-voltage applications such as DC

 0.40. Size:1452K  slkor
sl2312.pdf

2312
2312

SL2312SOT-23 Package Information Dimensions in Millimeters Symbol MIN. MAX.A 0.900 1.150A1 0.000 0.100A2 0.900 1.050b 0.300 0.500c 0.080 0.150D 2.800 3.000E 1.200 1.400E1 2.250 2.550e 0.950TYPe1 1.800 2.000L 0.550REFL1 0.300 0.500 0 8www.slkormicro.com3

 0.41. Size:1799K  umw-ic
si2312a.pdf

2312
2312

RUMWUMW SI2312AUMW SI2312A FeaturesSOT23 VDS (V) = 20V ID = 4.9 A (VGS =4.5V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 40m (VGS = 2.5V) RDS(ON) 51m (VGS = 1.8V)1. GATE MARKING 2. SOURCE 3. DRAIN G 1A12T3 DS 2 Absolute Maximum Ratings Ta = 25Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS 20V Gate

 0.42. Size:997K  agertech
atm2312nsa.pdf

2312
2312

ATM2312NSA N-CHANNEL ENHANCEMENT MODE POWER MOSFETDrain-Source Voltage: 20V Continuous Drain Current: 5.0A FEATURES SOT-23 Small PackageSOT-23 V =20V, I =5ADS DR 31.8m@V =4.5VDS(ON) GSR 35.6m@V =2.5VDS(ON) GS Advanced Trench TechnologyAPPLICATIONS D Load Switching for portable Application3 DC/DC Converter1 2 G SSchematic d

 0.43. Size:1137K  allpower
ap2312.pdf

2312
2312

 0.44. Size:2163K  anbon
as2312.pdf

2312
2312

AS231 2 N-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETS Dimensions In Millimeters Dimensions In InchesSymbolMin Max Min MaxA 0.900 1.150 0.035 0.045A1 0.000 0.100 0.000 0.004A2 0.900 1.050 0.035 0.041b 0.300 0.500 0.012 0.020c 0.080 0.150 0.003 0.006D 2.800 3.000 0.110 0.118E 1.200 1.400 0.047 0.055E1 2.250 2.550 0.089 0.100e 0.

 0.45. Size:1137K  convert
ctz2312a.pdf

2312
2312

nvertCTZ2312ASuzhou Convert Semiconductor Co ., Ltd.20V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Corre

 0.46. Size:2743K  fuxinsemi
fs2312.pdf

2312
2312

FS2312N-Channel SMD MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 18m@4.5V 20V 22m@2.5V 6.8A 39m@1.8V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Package Circuit diagramSOT-23MarkingS12www.fuxinsemi.com Page 1 Ver2.1FS2312N-Channel SMD MOSFET

 0.47. Size:1050K  huashuo
hss2312a.pdf

2312
2312

HSS2312A N-Ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSS2312A is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON RDS(ON),max 26 m and efficiency for most of the small power switching and load switch applications. ID 6 A The HSS2312A meet the RoHS and Green Product requirement with full function reliability approv

 0.48. Size:2289K  high diode
hd2312.pdf

2312
2312

HD2312SOT-23 Plastic-Encapsulate MOSFET N -Channel MOSFET roduct SummaryPID V(BR)DSS RDS(on)MAX SOT- 2331.8m@4.5VD35.6m@2.5V20V5A41.4m@1.8VSFeatures TrenchFET Power MOSFET G Excellent RDS(on) and Low Gate Charge Applications DC/DC Converters Load Switching for Portable Applications Marking: S12Symbol Unit Par

 0.49. Size:1164K  cn puolop
si2312.pdf

2312
2312

SI2312 20V N-Channel Enhancement Mode MOSFETVDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A

 0.50. Size:1104K  cn tuofeng
tf2312.pdf

2312
2312

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2312N-Channel 20-V(D-S) MOSFETTF2312V(BR)DSS RDS(on)MAX IDSOT-230.031@ 4.5V31.GATE20V0.037@ 2.5V 5.0A2.SOURCE3.DRAIN0.047@ 1.8V12General FEATURETrenchFET Power MOSFETEquivalent CircuitMARKINGLead free product is acquiredSurface mount packageAE9TF wA

 0.51. Size:769K  cn sps
sm2312srl.pdf

2312
2312

SM2312SRL20V /6A Single N Power MOSFET B N02B N 20V /6A Single N Power MOSFET 6N02BGeneral Description 20 VV DS20V /6A Single N Power MOSFET 18.9 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 42.0 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 6 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg TestedSM231

 0.52. Size:876K  cn vbsemi
si2312cds-t1-ge3.pdf

2312
2312

SI2312CDS-T1-GE3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/

 0.53. Size:907K  cn vbsemi
si2312bds-t1.pdf

2312
2312

SI2312BDS-T1www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC C

 0.54. Size:911K  cn vbsemi
tsm2312cx.pdf

2312
2312

TSM2312CXwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC

 0.55. Size:896K  cn vbsemi
sm2312nsa.pdf

2312
2312

SM2312NSAwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

 0.56. Size:1747K  cn vbsemi
cj2312.pdf

2312
2312

CJ2312www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Co

 0.57. Size:1476K  cn vbsemi
si2312ds.pdf

2312
2312

SI2312DSwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Conve

 0.58. Size:1343K  cn yangzhou yangjie elec
yjl2312al.pdf

2312
2312

RoHS COMPLIANT YJL2312AL N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 7.6A D R ( at V =4.5V) 17mohm DS(ON) GS R ( at V =2.5V) 20mohm DS(ON) GS R ( at V =1.8V) 35mohm DS(ON) GS 100% V Tested DSGeneral Description Trench Power LV MOSFET technology High Power and current handing capabilit

 0.59. Size:562K  cn yangzhou yangjie elec
yjl2312a.pdf

2312
2312

RoHS COMPLIANT YJL2312A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 6.8A D R ( at V =4.5V) 18 mohm DS(ON) GS R ( at V =2.5V) 22 mohm DS(ON) GS R ( at V =1.8V) 39 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High Power and current handing capability Applications PW

 0.60. Size:542K  cn wuxi unigroup
ttx2312a.pdf

2312
2312

TTX2312A Wuxi Unigroup Microelectronics CO.,LTD. 20V N-Channel Trench MOSFET Features Product Summary Trench Power Technology VDS 20V Low RDS(ON) RDS(ON) (at VGS=10V)

 0.61. Size:648K  cn hmsemi
hm2312b.pdf

2312
2312

HM2312BN-Channel Enhancement Mode Power MOSFET Description DThe HM2312B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON)

 0.62. Size:554K  cn hmsemi
hm2312.pdf

2312
2312

HM2312N-Channel Enhancement Mode Power MOSFET Description DThe HM2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON)

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top

 


2312
  2312
  2312
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: MRF5035 | MRF5015 | MRF5007R1 | MRF5007 | MRF5003 | MRF275G | MRF184S | MRF184 | MRF177M | MRF177 | MRF176GV | MRF176GU | MRF175LV | MRF175LU | MRF175GV | MRF175GU

 

 

 
Back to Top