3415A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

GOFORD3415ADescription The 3415 A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protected. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID(Typ) @ (Typ) @-2.5V -4.5V 35.8m 46.4m -5.6-20

SI3415AFeatures High Power and Current Handing Capability Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1)P-Channel Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)MOSFETMaximum Ratings Operating Junction Temperature Range : -55oC to +150oC

AO3415A20V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AO3415A uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-4.5V) -5Awith gate voltages as low as 1.8V. This device is suitable RDS(ON) (at VGS= -4.5V)

Spec. No. : C209A3 Issued Date : 2008.01.25 CYStech Electronics Corp.Revised Date : 2014.03.06 Page No. : 1/6 High Voltage NPN Epitaxial Planar Transistor BTC3415A3Description High breakdown voltage. (BV =300V) CEO Low collector output capacitance. (Typ. 2.1pF at V =30V) CB Ideal for chroma circuit. Pb-free lead plating and halogen-free package. Symbo

SMD Type MOSFETP-Channel MOSFETAO3415A (KO3415A)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features3 VDS (V) =-20V ID =-5 A (VGS =-4.5V) RDS(ON) 43m (VGS =-4.5V)1 2+0.10.95-0.1 0.1+0.05 RDS(ON) 55m (VGS =-2.5V) -0.01+0.11.9-0.1 RDS(ON) 75m (VGS =-1.8V) RDS(ON) 100m (VGS =-1.5V)1. Gate2. SourceD3. Dra

SMD Type MOSFETTransistorsP-Channel MOSFET KO3415ASOT-23 Features Unit: mm+0.12.9 -0.1+0.1 VDS (V) =-12V 0.4-0.13 ID =-4.1 A (VGS =-4.5V) RDS(ON) 45m (VGS =-4.5V) RDS(ON) 60m (VGS =-2.5V)1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating U

SMD Type MOSFETP-Channel MOSFETAO3415AS (KO3415AS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.1 Features 3 VDS (V) =-20V ID =-4A (VGS =-4.5V) RDS(ON) 45m (VGS =-4.5V) 1 2+0.02+0.10.15 -0.020.95 -0.1D RDS(ON) 54m (VGS =-2.5V)+0.11.9 -0.2 RDS(ON) 75m (VGS =-1.8V) ESD Rating: 3000V HBMG1. Gate2. Source3. Dra

SMD Type MOSFETP-Channel MOSFETAO3415A (KO3415A)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-5 A (VGS =-4.5V)1 2 RDS(ON) 43m (VGS =-4.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 55m (VGS =-2.5V) RDS(ON) 75m (VGS =-1.8V) RDS(ON) 100m (VGS =-1.5V)1. Gate2. Source

PPJA3415AE 20V P-Channel Enhancement Mode MOSFET ESD Protected SOT-23 Unit : inch(mm) Voltage -20 V Current -4.3A Features RDS(ON) , VGS@-4.5V, ID@-4.3A

AM3415A AiT Semiconductor Inc. www.ait-ic.com MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM3415A uses advanced trench technology to V = -20V,I =-4A DS Dprovide excellent R , low gate charge and R

SMC3415A -20V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3415A is the P-Channel logic -20V/-4.0A, RDS(ON) =43m(typ)@VGS =-4.5V enhancement mode power field effect transistor is -20V/-4.0A, RDS(ON) =58m(typ)@VGS =-2.5V produced using high cell density. advanced trench -20V/-2.0A, RDS(ON) =78m(typ)@VGS =-1.8V technology to provide excel

RUMW UMW AO3415ASOT-23 Plastic-Encapsulate MOSFETSUMW AO3415A P-Channel 20-V(D-S) MOSFETSOT-23 ID V(BR)DSS RDS(on)MAX 50m@-4.5V-20V 60m@-2.5V-4A1. GATE 73m@-1.8V2. SOURCE 3. DRAIN APPLICATION FEATURE Load switch and in PWM applicatopns Excellent RDS(ON), low gate charge,low gate voltages MARKING Equivalent Circuit D G AFHVS Maximum ratings

HX3415AP-Channel Enhancement Mode MOSFETDescription Schematic diagramThe HX3415 uses advanced trench technologyto provide excellent R , low gate charge andDS(ON)operation with gate voltages as low as 1.8V. Thisdevice is suitable for use as a load switch or in PWMapplications.General Features V =-20VI =-4ADS DR (Typ.)=42m @V =-2.5VDS(ON) GSR (Typ.)=38.3m @

www.msksemi.comAO3415AI-MSSemiconductor CompianceDVDS -20VI (at V =-4.5V) -4AD GSR (at V = -4.5V)

WST3415AP-Ch MOSFETGeneral Description Product SummeryThe WST3415A is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -20V 58m -5.3Agate charge for most of the small power switching and load switch applications. Applications The WST3415A meet the RoHS and Green Product requirement , with fu

AO3415Awww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

RoHS COMPLIANT YJQ3415A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -6.2A D R ( at V =-4.5V) 42 mohm DS(ON) GS R ( at V =-2.5V) 55 mohm DS(ON) GS R ( at V =-1.8V) 100 mohm DS(ON) GS ESD Protected Up to 4.0KV (HBM) General Description Trench Power LV MOSFET technology High Density Cell Des

RoHS COMPLIANT YJL3415A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -5.6A D R ( at V =-4.5V) 42 mohm DS(ON) GS R ( at V =-2.5V) 55 mohm DS(ON) GS R ( at V =-1.8V) 100 mohm DS(ON) GS ESD Protected Up to 2.0KV (HBM) General Description Trench Power LV MOSFET technology High Density Cell Des