SSP1N60A MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SSP1N60A datasheet

..1. Size:931K samsung
ssp1n60a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 12 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 600V Low RDS(ON) 9.390 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value U

9.1. Size:942K samsung
ssp1n50a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 5.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 4.046 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val

Otros transistores... SSI4N90A , SSI4N90AS , SSI5N80A , SSI5N90A , SSI6N70A , SSI7N60A , SSP10N60A , SSP1N50A , 8N60 , SSP2N60A , SSP2N80A , SSP2N90A , SSP3N70 , SSP3N70A , SSP3N80A , SSP3N90A , SSP45N20A .