SSP1N60A PDF and Equivalents Search

 

SSP1N60A Specs and Replacement

Type Designator: SSP1N60A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm

Package: TO220

SSP1N60A substitution

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SSP1N60A datasheet

 ..1. Size:931K  samsung
 ssp1n60a.pdf pdf_icon

SSP1N60A

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 12 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 600V Low RDS(ON) 9.390 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value U... See More ⇒

 9.1. Size:942K  samsung
 ssp1n50a.pdf pdf_icon

SSP1N60A

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 5.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 4.046 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val... See More ⇒

Detailed specifications: SSI4N90A, SSI4N90AS, SSI5N80A, SSI5N90A, SSI6N70A, SSI7N60A, SSP10N60A, SSP1N50A, 8N60, SSP2N60A, SSP2N80A, SSP2N90A, SSP3N70, SSP3N70A, SSP3N80A, SSP3N90A, SSP45N20A

Keywords - SSP1N60A MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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