G110N06K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: G110N06K
Código: G110N06
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 120 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 110 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 VQgⓘ - Carga de la puerta: 113 nC
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 380 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0064 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET G110N06K
G110N06K Datasheet (PDF)
g110n06k.pdf
GOFORD G110N06KGeneral Description The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON)switching applications. Features VDSS RDS(ON) IDSchematic diagram @10V (Typ)55V 5.2 m 110A Ultra Low On-Resistance High UIS and UIS 100% Tes
g110n06 to252 to251.pdf
GOFORD G110N06 General Description The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON)switching applications. Features VDSS RDS(ON) ID @10V (Typ)TO-252 TO-251 55V 5.2 m 110A Ultra Low On-Resistance High UIS and UIS 100% Test
g110n06 to220.pdf
GOFORD G110N06 General Description The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON)switching applications. Features Schematic diagram VDSS RDS(ON) ID @10V (Typ)55V 5.2 m 110A Ultra Low On-Resistance High UIS and UIS 100% Te
g110n06 to252.pdf
GOFORDG110N06.Description The G110N06. uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @ 10V (Typ)m m 11055V 5.8 5.4 A High density cell design for ultra low Rdson Fully characteriz
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