G110N06K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: G110N06K
   Código: G110N06
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 110 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 113 nC
   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 380 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0064 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET G110N06K

G110N06K Datasheet (PDF)

..1. Size:3507K goford
g110n06k.pdf

GOFORD G110N06KGeneral Description The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON)switching applications. Features VDSS RDS(ON) IDSchematic diagram @10V (Typ)55V 5.2 m 110A Ultra Low On-Resistance High UIS and UIS 100% Tes

7.1. Size:1551K goford
g110n06 to252 to251.pdf

GOFORD G110N06 General Description The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON)switching applications. Features VDSS RDS(ON) ID @10V (Typ)TO-252 TO-251 55V 5.2 m 110A Ultra Low On-Resistance High UIS and UIS 100% Test

7.2. Size:1574K goford
g110n06 to220.pdf

GOFORD G110N06 General Description The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON)switching applications. Features Schematic diagram VDSS RDS(ON) ID @10V (Typ)55V 5.2 m 110A Ultra Low On-Resistance High UIS and UIS 100% Te

7.3. Size:1351K goford
g110n06 to252.pdf

GOFORDG110N06.Description The G110N06. uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @ 10V (Typ)m m 11055V 5.8 5.4 A High density cell design for ultra low Rdson Fully characteriz

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: