G110N06K MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

G110N06K datasheet

..1. Size:3507K goford
g110n06k.pdf pdf_icon

GOFORD G110N06K General Description The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON) switching applications. Features VDSS RDS(ON) ID Schematic diagram @ 10V (Typ) 55V 5.2 m 110A Ultra Low On-Resistance High UIS and UIS 100% Tes

7.1. Size:1551K goford
g110n06 to252 to251.pdf pdf_icon

GOFORD G110N06 General Description The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON) switching applications. Features VDSS RDS(ON) ID @ 10V (Typ) TO-252 TO-251 55V 5.2 m 110A Ultra Low On-Resistance High UIS and UIS 100% Test

7.2. Size:1574K goford
g110n06 to220.pdf pdf_icon

GOFORD G110N06 General Description The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON) switching applications. Features Schematic diagram VDSS RDS(ON) ID @ 10V (Typ) 55V 5.2 m 110A Ultra Low On-Resistance High UIS and UIS 100% Te

7.3. Size:1351K goford
g110n06 to252.pdf pdf_icon

GOFORD G110N06. Description The G110N06. uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @ 4.5V (Typ) @ 10V (Typ) m m 110 55V 5.8 5.4 A High density cell design for ultra low Rdson Fully characteriz

Otros transistores... 8680A , G01N20R , G06N10 , G08N03D2 , G08N06S , G1006LE , G1007 , G10N10A , IRFP450 , G12P10K , G13N04 , G15N10C , G16P03 , G16P03S , G18N20K , G1NP02ELL , G2003A .