G110N06K MOSFET Datasheet: N-Ch, 55V, 110A. Full specification with pinout and replacement list

G110N06K Specs and Replacement

Type Designator: G110N06K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 380 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0064 Ohm

Package: TO-252

G110N06K substitution

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G110N06K datasheet

..1. Size:3507K goford
g110n06k.pdf pdf_icon

GOFORD G110N06K General Description The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON) switching applications. Features VDSS RDS(ON) ID Schematic diagram @ 10V (Typ) 55V 5.2 m 110A Ultra Low On-Resistance High UIS and UIS 100% Tes... See More ⇒

7.1. Size:1551K goford
g110n06 to252 to251.pdf pdf_icon

GOFORD G110N06 General Description The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON) switching applications. Features VDSS RDS(ON) ID @ 10V (Typ) TO-252 TO-251 55V 5.2 m 110A Ultra Low On-Resistance High UIS and UIS 100% Test... See More ⇒

7.2. Size:1574K goford
g110n06 to220.pdf pdf_icon

GOFORD G110N06 General Description The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON) switching applications. Features Schematic diagram VDSS RDS(ON) ID @ 10V (Typ) 55V 5.2 m 110A Ultra Low On-Resistance High UIS and UIS 100% Te... See More ⇒

7.3. Size:1351K goford
g110n06 to252.pdf pdf_icon

GOFORD G110N06. Description The G110N06. uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @ 4.5V (Typ) @ 10V (Typ) m m 110 55V 5.8 5.4 A High density cell design for ultra low Rdson Fully characteriz... See More ⇒

Detailed specifications: 8680A, G01N20R, G06N10, G08N03D2, G08N06S, G1006LE, G1007, G10N10A, IRFP450, G12P10K, G13N04, G15N10C, G16P03, G16P03S, G18N20K, G1NP02ELL, G2003A