G16P03 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

G16P03 datasheet

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GOFORD G16P03 G16P03 G16P03 Description The G16P03 uses advanced trench technology to provide excellent R , low gate charge . This device is suitable for DS(ON) use as a load switch or in PWM applications. General Features RDS(ON) RDS(ON) VDSS ID @-10V (typ) @-4.5V (typ) Schematic diagram -30V 10.6 16.3 m -16A m High Power and current handing capability Le

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GOFORD G16P03 Description The G16P03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram RDS(ON) VDSS ID @-10V (typ) -30V -16A 10 m High Power and current handing capability Le

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g16p03d3.pdf pdf_icon

GOFORD G16P03D3 P-Channel Trench MOSFET Description The G16P03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features VDS -30V Schematic diagram ID (at VGS = -10V) -16A RDS(ON) (at VGS = -10V)

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g16p03s.pdf pdf_icon

GOFORD G16P03S P-Channel Trench MOSFET Description The G16P03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS -30V ID (at VGS = -10V) -16A RDS(ON) (at VGS = -10V)

Otros transistores... G08N06S , G1006LE , G1007 , G10N10A , G110N06K , G12P10K , G13N04 , G15N10C , 4N60 , G16P03S , G18N20K , G1NP02ELL , G2003A , G20N06J , G3035-23 , G30N03A , G30N03D3 .