Справочник MOSFET. G16P03

 

G16P03 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: G16P03
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 24 nC
   trⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 215 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm
   Тип корпуса: SOP-8

 Аналог (замена) для G16P03

 

 

G16P03 Datasheet (PDF)

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 g16p03.pdf

G16P03 G16P03

GOFORDG16P03G16P03G16P03DescriptionThe G16P03 uses advanced trench technology to provideexcellent R , low gate charge . This device is suitable forDS(ON)use as a load switch or in PWM applications.General FeaturesRDS(ON) RDS(ON) VDSS ID @-10V (typ) @-4.5V (typ) Schematic diagram-30V 10.6 16.3 m -16A m High Power and current handing capability Le

 ..2. Size:1073K  goford
 g16p03.pdf

G16P03 G16P03

GOFORDG16P03Description The G16P03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram RDS(ON) VDSS ID @-10V (typ) -30V -16A 10 m High Power and current handing capability Le

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 g16p03d3.pdf

G16P03 G16P03

GOFORD G16P03D3P-Channel Trench MOSFETDescriptionThe G16P03D3 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General Features VDS -30V Schematic diagram ID (at VGS = -10V) -16A RDS(ON) (at VGS = -10V)

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 g16p03s.pdf

G16P03 G16P03

GOFORD G16P03SP-Channel Trench MOSFETDescriptionThe G16P03S uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic diagram VDS -30V ID (at VGS = -10V) -16A RDS(ON) (at VGS = -10V)

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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