G50N03A Todos los transistores

 ..1. Size:2370K  goford
 g50n03a.pdf

GOFORD G50N03A DESCRIPTION The G50N03A uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide TO-252 Vanety of applications . GENERAL FEATURES VDSS RDS(ON) RDS(ON) ID @ 4.5V (Typ) @ 10V (Typ) 30V 10m 6.2 m 50 A High density cell design for ultra low Rdson Fully characterized Avalanche voltage

 0.1. Size:1339K  cn yangzhou yangjie elec
 yjg50n03a.pdf

RoHS COMPLIANT YJG50N03A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 50A D R ( at V = 10V) 4.7mohm DS(ON) GS R ( at V =4.5V) 6.0mohm DS(ON) GS 100% UIS Tested 100% V Tested DS General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density ce

 8.1. Size:513K  mcc
 mcg50n03.pdf

MCG50N03 Features Trench Power LV MOSFET Technology Excellent Package for Heat Dissipation High Density Cell Design for Low RDS(on) Epoxy Meets UL 94 V-0 Flammability Rating N-CHANNEL Moisture Sensitivity Level 1 MOSFET Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Order

 8.2. Size:624K  goford
 g50n03k.pdf

GOFORD G50N03K N-Channel Enhancement Mode Power MOSFET Description The G50N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features VDS 30V Schematic diagram ID (at VGS = 10V) 65A RDS(ON) (at VGS = 10V)