G50N03A MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

G50N03A datasheet

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GOFORD G50N03A DESCRIPTION The G50N03A uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide TO-252 Vanety of applications . GENERAL FEATURES VDSS RDS(ON) RDS(ON) ID @ 4.5V (Typ) @ 10V (Typ) 30V 10m 6.2 m 50 A High density cell design for ultra low Rdson Fully characterized Avalanche voltage

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RoHS COMPLIANT YJG50N03A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 50A D R ( at V = 10V) 4.7mohm DS(ON) GS R ( at V =4.5V) 6.0mohm DS(ON) GS 100% UIS Tested 100% V Tested DS General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density ce

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MCG50N03 Features Trench Power LV MOSFET Technology Excellent Package for Heat Dissipation High Density Cell Design for Low RDS(on) Epoxy Meets UL 94 V-0 Flammability Rating N-CHANNEL Moisture Sensitivity Level 1 MOSFET Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Order

8.2. Size:624K goford
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GOFORD G50N03K N-Channel Enhancement Mode Power MOSFET Description The G50N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features VDS 30V Schematic diagram ID (at VGS = 10V) 65A RDS(ON) (at VGS = 10V)

Otros transistores... G30N03D3 , G30N04D3 , G30N20K , G30N20T , G30N20F , G33N03D3 , G48N03D3 , G4N60K , 8N60 , G50N03K , G5N50T , G5N50F , G5N50J , G5N50K , G6P06 , G7P03L , G86N06K .