G50N03A - описание и поиск аналогов

GOFORD G50N03A DESCRIPTION The G50N03A uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide TO-252 Vanety of applications . GENERAL FEATURES VDSS RDS(ON) RDS(ON) ID @ 4.5V (Typ) @ 10V (Typ) 30V 10m 6.2 m 50 A High density cell design for ultra low Rdson Fully characterized Avalanche voltage

RoHS COMPLIANT YJG50N03A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 50A D R ( at V = 10V) 4.7mohm DS(ON) GS R ( at V =4.5V) 6.0mohm DS(ON) GS 100% UIS Tested 100% V Tested DS General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density ce

MCG50N03 Features Trench Power LV MOSFET Technology Excellent Package for Heat Dissipation High Density Cell Design for Low RDS(on) Epoxy Meets UL 94 V-0 Flammability Rating N-CHANNEL Moisture Sensitivity Level 1 MOSFET Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Order

GOFORD G50N03K N-Channel Enhancement Mode Power MOSFET Description The G50N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features VDS 30V Schematic diagram ID (at VGS = 10V) 65A RDS(ON) (at VGS = 10V)