GOFORDG50N03ADESCRIPTIONThe G50N03A uses advanced trench technologyAnd design to provide excellent RDS (ON ) withLow gate charge . It can be used in a wideTO-252 Vanety of applications .GENERAL FEATURESVDSS RDS(ON) RDS(ON) ID @ 4.5V (Typ) @ 10V (Typ)30V10m 6.2 m 50 A High density cell design for ultra low Rdson Fully characterized Avalanche voltage

RoHS COMPLIANT YJG50N03A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 50A D R ( at V = 10V) 4.7mohm DS(ON) GS R ( at V =4.5V) 6.0mohm DS(ON) GS 100% UIS Tested 100% V Tested DSGeneral Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density ce

MCG50N03Features Trench Power LV MOSFET Technology Excellent Package for Heat Dissipation High Density Cell Design for Low RDS(on) Epoxy Meets UL 94 V-0 Flammability Rating N-CHANNEL Moisture Sensitivity Level 1MOSFET Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Order

GOFORD G50N03KN-Channel Enhancement Mode Power MOSFETDescriptionThe G50N03K uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General Features VDS 30V Schematic diagram ID (at VGS = 10V) 65A RDS(ON) (at VGS = 10V)