G50N03K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: G50N03K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 65 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 280 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET G50N03K

G50N03K Datasheet (PDF)

..1. Size:624K goford
g50n03k.pdf

GOFORD G50N03KN-Channel Enhancement Mode Power MOSFETDescriptionThe G50N03K uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General Features VDS 30V Schematic diagram ID (at VGS = 10V) 65A RDS(ON) (at VGS = 10V)

8.1. Size:513K mcc
mcg50n03.pdf

MCG50N03Features Trench Power LV MOSFET Technology Excellent Package for Heat Dissipation High Density Cell Design for Low RDS(on) Epoxy Meets UL 94 V-0 Flammability Rating N-CHANNEL Moisture Sensitivity Level 1MOSFET Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Order

8.2. Size:2370K goford
g50n03a.pdf

GOFORDG50N03ADESCRIPTIONThe G50N03A uses advanced trench technologyAnd design to provide excellent RDS (ON ) withLow gate charge . It can be used in a wideTO-252 Vanety of applications .GENERAL FEATURESVDSS RDS(ON) RDS(ON) ID @ 4.5V (Typ) @ 10V (Typ)30V10m 6.2 m 50 A High density cell design for ultra low Rdson Fully characterized Avalanche voltage

8.3. Size:1339K cn yangzhou yangjie elec
yjg50n03a.pdf

RoHS COMPLIANT YJG50N03A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 50A D R ( at V = 10V) 4.7mohm DS(ON) GS R ( at V =4.5V) 6.0mohm DS(ON) GS 100% UIS Tested 100% V Tested DSGeneral Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density ce

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