G50N03K
MOSFET. Datasheet pdf. Equivalent
Type Designator: G50N03K
Marking Code: G50N03
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 48
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 65
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 16.6
nC
trⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 280
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007
Ohm
Package:
TO-252
G50N03K
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
G50N03K
Datasheet (PDF)
..1. Size:624K goford
g50n03k.pdf
GOFORD G50N03KN-Channel Enhancement Mode Power MOSFETDescriptionThe G50N03K uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General Features VDS 30V Schematic diagram ID (at VGS = 10V) 65A RDS(ON) (at VGS = 10V)
8.1. Size:513K mcc
mcg50n03.pdf
MCG50N03Features Trench Power LV MOSFET Technology Excellent Package for Heat Dissipation High Density Cell Design for Low RDS(on) Epoxy Meets UL 94 V-0 Flammability Rating N-CHANNEL Moisture Sensitivity Level 1MOSFET Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Order
8.2. Size:2370K goford
g50n03a.pdf
GOFORDG50N03ADESCRIPTIONThe G50N03A uses advanced trench technologyAnd design to provide excellent RDS (ON ) withLow gate charge . It can be used in a wideTO-252 Vanety of applications .GENERAL FEATURESVDSS RDS(ON) RDS(ON) ID @ 4.5V (Typ) @ 10V (Typ)30V10m 6.2 m 50 A High density cell design for ultra low Rdson Fully characterized Avalanche voltage
8.3. Size:1339K cn yangzhou yangjie elec
yjg50n03a.pdf
RoHS COMPLIANT YJG50N03A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 50A D R ( at V = 10V) 4.7mohm DS(ON) GS R ( at V =4.5V) 6.0mohm DS(ON) GS 100% UIS Tested 100% V Tested DSGeneral Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density ce
Datasheet: IRFP344
, IRFP350
, IRFP350A
, IRFP350FI
, IRFP350LC
, IRFP351
, IRFP352
, IRFP353
, 2SK3568
, IRFP360
, IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
.