DMT3009LFVW MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMT3009LFVW
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.2 nS
Cossⓘ - Capacitancia de salida: 352 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0111 Ohm
Paquete / Cubierta: POWERDI3333-8
Búsqueda de reemplazo de DMT3009LFVW MOSFET
DMT3009LFVW Datasheet (PDF)
dmt3009lfvw.pdf

DMT3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary Features and Benefits Low RDS(ON) Ensures On State Losses Are Minimized ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25C Density End Products 11m @ VGS = 10V 50A Occupies Just 33% of The Board Area Occupied by
dmt3009lfvw-7.pdf

DMT3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary Features and Benefits Low RDS(ON) Ensures On State Losses Are Minimized ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25C Density End Products 11m @ VGS = 10V 50A Occupies Just 33% of The Board Area Occupied by
dmt3009ldt.pdf

DMT3009LDT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Low Gate Threshold Voltage Device BVDSS RDS(ON) Max TC = +25 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) C (Note 10) Halogen and Antimony Free. Green Device (Note 3) 11.1m @ VGS = 10V 30A Q1 & Q2 30V 13.8m @ VGS = 4.5V 28A 22.0m @ VGS = 3.8V 22A
dmt3006lps-13.pdf

DMT3006LPS GreenN-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features and Benefits Low RDS(ON) Minimizes On-State Losses ID max Excellent Qgd x RDS(ON) Product (FOM) BVDSS RDS(ON) max TC = +25C Advanced Technology for DC-DC Converters Small Form Factor Thermally Efficient Package Enables Higher 6m @ VGS = 10V 65A Density En
Otros transistores... DMT10H010LK3 , DMT10H010LSS , DMT10H015LPS , DMT10H015LSS , DMT3002LPS , DMT3006LFV , DMT3006LPS , DMT3009LDT , AON7410 , DMT3020LFDB , DMT3020LFDF , DMT3020LSD , DMT31M6LPS , DMT32M5LFG , DMT32M5LPS , DMT4002LPS , DMT4011LFG .
History: TK31V60W | NTP190N65S3HF | GP2M002A060XX | SSB65R090S2 | NCE65NF130LL | SMC8205AS | BSR802N
History: TK31V60W | NTP190N65S3HF | GP2M002A060XX | SSB65R090S2 | NCE65NF130LL | SMC8205AS | BSR802N



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: MPT035N08S | MPT035N08P | MPG150N10S | MPG150N10P | MPG120N06S | MPG120N06P | MPG08N68S | MPG08N68P | MPF10N65 | MDT4N65 | MDT30P10D | MD70N10 | MD50N20 | MD25N50 | MD20N50 | MD100N20
Popular searches
2sc1096 | 2sc2058 | a1693 datasheet | bdw94c equivalent | c2389 | c495 transistor | c5242 reemplazo | d667 transistor datasheet