DMT3009LFVW Todos los transistores

 

DMT3009LFVW MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMT3009LFVW
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.2 nS
   Cossⓘ - Capacitancia de salida: 352 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0111 Ohm
   Paquete / Cubierta: POWERDI3333-8
 

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DMT3009LFVW Datasheet (PDF)

 ..1. Size:520K  diodes
dmt3009lfvw.pdf pdf_icon

DMT3009LFVW

DMT3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary Features and Benefits Low RDS(ON) Ensures On State Losses Are Minimized ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25C Density End Products 11m @ VGS = 10V 50A Occupies Just 33% of The Board Area Occupied by

 0.1. Size:520K  1
dmt3009lfvw-7.pdf pdf_icon

DMT3009LFVW

DMT3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary Features and Benefits Low RDS(ON) Ensures On State Losses Are Minimized ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25C Density End Products 11m @ VGS = 10V 50A Occupies Just 33% of The Board Area Occupied by

 6.1. Size:449K  diodes
dmt3009ldt.pdf pdf_icon

DMT3009LFVW

DMT3009LDT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Low Gate Threshold Voltage Device BVDSS RDS(ON) Max TC = +25 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) C (Note 10) Halogen and Antimony Free. Green Device (Note 3) 11.1m @ VGS = 10V 30A Q1 & Q2 30V 13.8m @ VGS = 4.5V 28A 22.0m @ VGS = 3.8V 22A

 8.1. Size:337K  1
dmt3006lps-13.pdf pdf_icon

DMT3009LFVW

DMT3006LPS GreenN-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features and Benefits Low RDS(ON) Minimizes On-State Losses ID max Excellent Qgd x RDS(ON) Product (FOM) BVDSS RDS(ON) max TC = +25C Advanced Technology for DC-DC Converters Small Form Factor Thermally Efficient Package Enables Higher 6m @ VGS = 10V 65A Density En

Otros transistores... DMT10H010LK3 , DMT10H010LSS , DMT10H015LPS , DMT10H015LSS , DMT3002LPS , DMT3006LFV , DMT3006LPS , DMT3009LDT , AON7410 , DMT3020LFDB , DMT3020LFDF , DMT3020LSD , DMT31M6LPS , DMT32M5LFG , DMT32M5LPS , DMT4002LPS , DMT4011LFG .

History: FQB19N20CTM | FTK1N60P

 

 
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