Справочник MOSFET. DMT3009LFVW

 

DMT3009LFVW Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: DMT3009LFVW
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 35.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 5.2 ns
   Cossⓘ - Выходная емкость: 352 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0111 Ohm
   Тип корпуса: POWERDI3333-8
     - подбор MOSFET транзистора по параметрам

 

DMT3009LFVW Datasheet (PDF)

 ..1. Size:520K  diodes
dmt3009lfvw.pdfpdf_icon

DMT3009LFVW

DMT3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary Features and Benefits Low RDS(ON) Ensures On State Losses Are Minimized ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25C Density End Products 11m @ VGS = 10V 50A Occupies Just 33% of The Board Area Occupied by

 0.1. Size:520K  1
dmt3009lfvw-7.pdfpdf_icon

DMT3009LFVW

DMT3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary Features and Benefits Low RDS(ON) Ensures On State Losses Are Minimized ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25C Density End Products 11m @ VGS = 10V 50A Occupies Just 33% of The Board Area Occupied by

 6.1. Size:449K  diodes
dmt3009ldt.pdfpdf_icon

DMT3009LFVW

DMT3009LDT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Low Gate Threshold Voltage Device BVDSS RDS(ON) Max TC = +25 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) C (Note 10) Halogen and Antimony Free. Green Device (Note 3) 11.1m @ VGS = 10V 30A Q1 & Q2 30V 13.8m @ VGS = 4.5V 28A 22.0m @ VGS = 3.8V 22A

 8.1. Size:337K  1
dmt3006lps-13.pdfpdf_icon

DMT3009LFVW

DMT3006LPS GreenN-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features and Benefits Low RDS(ON) Minimizes On-State Losses ID max Excellent Qgd x RDS(ON) Product (FOM) BVDSS RDS(ON) max TC = +25C Advanced Technology for DC-DC Converters Small Form Factor Thermally Efficient Package Enables Higher 6m @ VGS = 10V 65A Density En

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: PMBFJ210 | R6535KNZ1 | JFFM5N80C | VSE002N03MS-G | R6524KNJ | STD7NS20 | 2SK3430-ZJ

 

 
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