DMT3020LSD Todos los transistores

 ..1. Size:471K  diodes
 dmt3020lsd.pdf

DMT3020LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Dual N-Channel MOSFET BVDSS RDS(ON) Max TA = +25 C Low On-Resistance Low Gate Threshold Voltage 20m @ VGS = 10V 16A 30V Low Input Capacitance 32m @ VGS = 4.5V 13A Fast Switching Speed Low Input/Output Leakage Description Totally Lead-Free & Fully RoHS Comp

 6.1. Size:582K  diodes
 dmt3020lfdb.pdf

DMT3020LFDB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm Profile Ideal for Low Profile Applications ID Max V(BR)DSS RDS(ON) Max TA = +25 C Low Gate Threshold Voltage Low On-Resistance 7.7A 20m @ VGS = 10V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 30V 32m @ VGS = 4.5V 6.1A Halogen and An

 6.2. Size:407K  diodes
 dmt3020lfdf.pdf

DMT3020LFDF 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm Profile Ideal for Low Profile Applications ID max V(BR)DSS RDS(ON) max PCB Footprint of 4mm2 TA = +25 C Low Gate Threshold Voltage 17m @ VGS = 10V 8.4A Low On-Resistance 30V 28m @ VGS = 4.5V 6.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 9.1. Size:520K  1
 dmt3009lfvw-7.pdf

DMT3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary Features and Benefits Low RDS(ON) Ensures On State Losses Are Minimized ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25 C Density End Products 11m @ VGS = 10V 50A Occupies Just 33% of The Board Area Occupied by

 9.2. Size:337K  1
 dmt3006lps-13.pdf

DMT3006LPS Green N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features and Benefits Low RDS(ON) Minimizes On-State Losses ID max Excellent Qgd x RDS(ON) Product (FOM) BVDSS RDS(ON) max TC = +25 C Advanced Technology for DC-DC Converters Small Form Factor Thermally Efficient Package Enables Higher 6m @ VGS = 10V 65A Density En

 9.3. Size:410K  1
 dmt3006lfv-7.pdf

DMT3006LFV 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features Low RDS(ON) Ensures On-State Losses are Minimized ID Max BVDSS RDS(ON) Max TC = +25 Small Form Factor Thermally Efficient Package Enables Higher C Density End Products 7m @ VGS = 10V 30V 60A Occupies just 33% of the Board Area Occupied by SO-8 Enabling

 9.4. Size:461K  diodes
 dmt3002lps.pdf

DMT3002LPS Green 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (Type K) Product Summary Features Thermally Efficient Package Cooler Running Applications ID BVDSS RDS(ON) TC = +25 C

 9.5. Size:520K  diodes
 dmt3009lfvw.pdf

DMT3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary Features and Benefits Low RDS(ON) Ensures On State Losses Are Minimized ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25 C Density End Products 11m @ VGS = 10V 50A Occupies Just 33% of The Board Area Occupied by

 9.6. Size:449K  diodes
 dmt3009ldt.pdf

DMT3009LDT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Low Gate Threshold Voltage Device BVDSS RDS(ON) Max TC = +25 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) C (Note 10) Halogen and Antimony Free. Green Device (Note 3) 11.1m @ VGS = 10V 30A Q1 & Q2 30V 13.8m @ VGS = 4.5V 28A 22.0m @ VGS = 3.8V 22A

 9.7. Size:421K  diodes
 dmt3008lfdf.pdf

 9.8. Size:337K  diodes
 dmt3006lps.pdf

DMT3006LPS Green N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features and Benefits Low RDS(ON) Minimizes On-State Losses ID max Excellent Qgd x RDS(ON) Product (FOM) BVDSS RDS(ON) max TC = +25 C Advanced Technology for DC-DC Converters Small Form Factor Thermally Efficient Package Enables Higher 6m @ VGS = 10V 65A Density En

 9.9. Size:410K  diodes
 dmt3006lfv.pdf

DMT3006LFV 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features Low RDS(ON) Ensures On-State Losses are Minimized ID Max BVDSS RDS(ON) Max TC = +25 Small Form Factor Thermally Efficient Package Enables Higher C Density End Products 7m @ VGS = 10V 30V 60A Occupies just 33% of the Board Area Occupied by SO-8 Enabling