DMT3020LSD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: DMT3020LSD
Маркировка: T3020LD
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1.5 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 16 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 7 nC
Время нарастания (tr): 1.9 ns
Выходная емкость (Cd): 173 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.02 Ohm
Тип корпуса: SO8
Аналог (замена) для DMT3020LSD
DMT3020LSD Datasheet (PDF)
dmt3020lsd.pdf
DMT3020LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Dual N-Channel MOSFET BVDSS RDS(ON) Max TA = +25C Low On-Resistance Low Gate Threshold Voltage 20m @ VGS = 10V 16A 30V Low Input Capacitance 32m @ VGS = 4.5V 13A Fast Switching Speed Low Input/Output Leakage Description Totally Lead-Free & Fully RoHS Comp
dmt3020lfdb.pdf
DMT3020LFDB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm Profile Ideal for Low Profile Applications ID Max V(BR)DSS RDS(ON) Max TA = +25C Low Gate Threshold Voltage Low On-Resistance 7.7A 20m @ VGS = 10V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 30V 32m @ VGS = 4.5V 6.1A Halogen and An
dmt3020lfdf.pdf
DMT3020LFDF 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm Profile Ideal for Low Profile Applications ID max V(BR)DSS RDS(ON) max PCB Footprint of 4mm2 TA = +25C Low Gate Threshold Voltage 17m @ VGS = 10V 8.4A Low On-Resistance 30V 28m @ VGS = 4.5V 6.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
dmt3009lfvw-7.pdf
DMT3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary Features and Benefits Low RDS(ON) Ensures On State Losses Are Minimized ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25C Density End Products 11m @ VGS = 10V 50A Occupies Just 33% of The Board Area Occupied by
dmt3006lps-13.pdf
DMT3006LPS GreenN-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features and Benefits Low RDS(ON) Minimizes On-State Losses ID max Excellent Qgd x RDS(ON) Product (FOM) BVDSS RDS(ON) max TC = +25C Advanced Technology for DC-DC Converters Small Form Factor Thermally Efficient Package Enables Higher 6m @ VGS = 10V 65A Density En
dmt3006lfv-7.pdf
DMT3006LFV 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features Low RDS(ON) Ensures On-State Losses are Minimized ID Max BVDSS RDS(ON) Max TC = +25 Small Form Factor Thermally Efficient Package Enables Higher C Density End Products 7m @ VGS = 10V 30V 60A Occupies just 33% of the Board Area Occupied by SO-8 Enabling
dmt3002lps.pdf
DMT3002LPS Green30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (Type K) Product Summary Features Thermally Efficient Package Cooler Running Applications ID BVDSS RDS(ON) TC = +25C
dmt3009lfvw.pdf
DMT3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary Features and Benefits Low RDS(ON) Ensures On State Losses Are Minimized ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25C Density End Products 11m @ VGS = 10V 50A Occupies Just 33% of The Board Area Occupied by
dmt3009ldt.pdf
DMT3009LDT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Low Gate Threshold Voltage Device BVDSS RDS(ON) Max TC = +25 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) C (Note 10) Halogen and Antimony Free. Green Device (Note 3) 11.1m @ VGS = 10V 30A Q1 & Q2 30V 13.8m @ VGS = 4.5V 28A 22.0m @ VGS = 3.8V 22A
dmt3008lfdf.pdf
DMT3008LFDF 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm Profile Ideal for Low Profile Applications ID max V(BR)DSS RDS(ON) max PCB Footprint of 4mm2 TA = +25C Low Gate Threshold Voltage 10m @ VGS = 10V 12.0A 30V Low On-Resistance 16m @ VGS = 4.5V 10.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
dmt3006lps.pdf
DMT3006LPS GreenN-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features and Benefits Low RDS(ON) Minimizes On-State Losses ID max Excellent Qgd x RDS(ON) Product (FOM) BVDSS RDS(ON) max TC = +25C Advanced Technology for DC-DC Converters Small Form Factor Thermally Efficient Package Enables Higher 6m @ VGS = 10V 65A Density En
dmt3006lfv.pdf
DMT3006LFV 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features Low RDS(ON) Ensures On-State Losses are Minimized ID Max BVDSS RDS(ON) Max TC = +25 Small Form Factor Thermally Efficient Package Enables Higher C Density End Products 7m @ VGS = 10V 30V 60A Occupies just 33% of the Board Area Occupied by SO-8 Enabling
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