DMT40M9LPS Todos los transistores

 ..1. Size:616K  diodes
 dmt40m9lps.pdf

DMT40M9LPS Green 40V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (Type K) Product Summary Features 100% Unclamped Inductive Switching Ensures More Reliable ID and Robust End Application BVDSS RDS(ON) Max TC = +25 C Thermally Efficient Package-Cooler Running Applications (Note 9) High Conversion Efficiency 0.9m @ VGS = 10V 304A Low RDS(ON)

 9.1. Size:399K  diodes
 dmt4002lps.pdf

DMT4002LPS Green 40V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features 100% Unclamped Inductive Switching Ensures More Reliable ID and Robust End Application BVDSS RDS(ON) max TC = +25 C Thermally Efficient Package-Cooler Running Applications (Note 9) High Conversion Efficiency 1.8m @ VGS = 10V 100A Low RDS(ON) Minimizes

 9.2. Size:436K  diodes
 dmt4003sct.pdf

DMT4003SCT Green 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switching (UIS) Test in Production ID BVDSS RDS(ON) Ensures More Reliable and Robust End Application TC = +25 C Low Input Capacitance 40V 3m @VGS = 10V 205A High BVDSS Rating for Power Application Low Input/Output Leakage Lead-Free Finis

 9.3. Size:449K  diodes
 dmt4011lfg.pdf

DMT4011LFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) Ensures On State Losses Are Minimized ID max Excellent Qgd x RDS(ON) Product (FOM) BVDSS RDS(ON) max TC = +25 C Advanced Technology for DC-DC Converters Small Form Factor Thermally Efficient Package Enables Higher 11.5m @ VGS = 10V 30A Density

 9.4. Size:264K  diodes
 dmt4005sct.pdf

DMT4005SCT 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switching ensures more reliable and robust end application ID BVDSS RDS(ON) max Low Input Capacitance TC = +25 C Low Input/Output Leakage 40V 4.7m @ VGS = 10V 100A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gre

 9.5. Size:261K  inchange semiconductor
 dmt4003sct.pdf

isc N-Channel MOSFET Transistor DMT4003SCT FEATURES Drain Current I = 205A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 3.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 9.6. Size:260K  inchange semiconductor
 dmt4005sct.pdf

isc N-Channel MOSFET Transistor DMT4005SCT FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 4.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu