DMT40M9LPS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMT40M9LPS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 304 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 27.4 nS
   Cossⓘ - Capacitancia de salida: 4518 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0009 Ohm
   Paquete / Cubierta: POWERDI5060-8

Búsqueda de reemplazo de MOSFET DMT40M9LPS

DMT40M9LPS Datasheet (PDF)

..1. Size:616K diodes
dmt40m9lps.pdf

DMT40M9LPSGreen40V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (Type K) Product Summary Features 100% Unclamped Inductive Switching Ensures More Reliable ID and Robust End Application BVDSS RDS(ON) Max TC = +25C Thermally Efficient Package-Cooler Running Applications (Note 9) High Conversion Efficiency 0.9m @ VGS = 10V 304A Low RDS(ON)

9.1. Size:399K diodes
dmt4002lps.pdf

DMT4002LPS Green40V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features 100% Unclamped Inductive Switching Ensures More Reliable ID and Robust End Application BVDSS RDS(ON) max TC = +25C Thermally Efficient Package-Cooler Running Applications (Note 9) High Conversion Efficiency 1.8m @ VGS = 10V 100A Low RDS(ON) Minimizes

9.2. Size:436K diodes
dmt4003sct.pdf

DMT4003SCT Green40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switching (UIS) Test in Production ID BVDSS RDS(ON) Ensures More Reliable and Robust End Application TC = +25C Low Input Capacitance 40V 3m @VGS = 10V 205A High BVDSS Rating for Power Application Low Input/Output Leakage Lead-Free Finis

9.3. Size:449K diodes
dmt4011lfg.pdf

DMT4011LFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) Ensures On State Losses Are Minimized ID max Excellent Qgd x RDS(ON) Product (FOM) BVDSS RDS(ON) max TC = +25C Advanced Technology for DC-DC Converters Small Form Factor Thermally Efficient Package Enables Higher 11.5m @ VGS = 10V 30A Density

9.4. Size:264K diodes
dmt4005sct.pdf

DMT4005SCT 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switching ensures more reliable and robust end application ID BVDSS RDS(ON) max Low Input Capacitance TC = +25C Low Input/Output Leakage 40V 4.7m @ VGS = 10V 100A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gre

9.5. Size:261K inchange semiconductor
dmt4003sct.pdf

isc N-Channel MOSFET Transistor DMT4003SCTFEATURESDrain Current I = 205A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

9.6. Size:260K inchange semiconductor
dmt4005sct.pdf

isc N-Channel MOSFET Transistor DMT4005SCTFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 4.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

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History: MRF136Y

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