Справочник MOSFET. DMT40M9LPS

 

DMT40M9LPS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DMT40M9LPS
   Маркировка: T40M9LS_T4001LS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 304 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 159 nC
   trⓘ - Время нарастания: 27.4 ns
   Cossⓘ - Выходная емкость: 4518 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0009 Ohm
   Тип корпуса: POWERDI5060-8

 Аналог (замена) для DMT40M9LPS

 

 

DMT40M9LPS Datasheet (PDF)

 ..1. Size:616K  diodes
 dmt40m9lps.pdf

DMT40M9LPS DMT40M9LPS

DMT40M9LPSGreen40V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (Type K) Product Summary Features 100% Unclamped Inductive Switching Ensures More Reliable ID and Robust End Application BVDSS RDS(ON) Max TC = +25C Thermally Efficient Package-Cooler Running Applications (Note 9) High Conversion Efficiency 0.9m @ VGS = 10V 304A Low RDS(ON)

 9.1. Size:399K  diodes
 dmt4002lps.pdf

DMT40M9LPS DMT40M9LPS

DMT4002LPS Green40V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features 100% Unclamped Inductive Switching Ensures More Reliable ID and Robust End Application BVDSS RDS(ON) max TC = +25C Thermally Efficient Package-Cooler Running Applications (Note 9) High Conversion Efficiency 1.8m @ VGS = 10V 100A Low RDS(ON) Minimizes

 9.2. Size:436K  diodes
 dmt4003sct.pdf

DMT40M9LPS DMT40M9LPS

DMT4003SCT Green40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switching (UIS) Test in Production ID BVDSS RDS(ON) Ensures More Reliable and Robust End Application TC = +25C Low Input Capacitance 40V 3m @VGS = 10V 205A High BVDSS Rating for Power Application Low Input/Output Leakage Lead-Free Finis

 9.3. Size:449K  diodes
 dmt4011lfg.pdf

DMT40M9LPS DMT40M9LPS

DMT4011LFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) Ensures On State Losses Are Minimized ID max Excellent Qgd x RDS(ON) Product (FOM) BVDSS RDS(ON) max TC = +25C Advanced Technology for DC-DC Converters Small Form Factor Thermally Efficient Package Enables Higher 11.5m @ VGS = 10V 30A Density

 9.4. Size:264K  diodes
 dmt4005sct.pdf

DMT40M9LPS DMT40M9LPS

DMT4005SCT 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switching ensures more reliable and robust end application ID BVDSS RDS(ON) max Low Input Capacitance TC = +25C Low Input/Output Leakage 40V 4.7m @ VGS = 10V 100A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gre

 9.5. Size:261K  inchange semiconductor
 dmt4003sct.pdf

DMT40M9LPS DMT40M9LPS

isc N-Channel MOSFET Transistor DMT4003SCTFEATURESDrain Current I = 205A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 9.6. Size:260K  inchange semiconductor
 dmt4005sct.pdf

DMT40M9LPS DMT40M9LPS

isc N-Channel MOSFET Transistor DMT4005SCTFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 4.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

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