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DMT6004LPS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMT6004LPS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 139 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 17.7 nS
   Cossⓘ - Capacitancia de salida: 1477 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0031 Ohm
   Paquete / Cubierta: POWERDI5060-8
 

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DMT6004LPS Datasheet (PDF)

 ..1. Size:378K  diodes
 dmt6004lps.pdf pdf_icon

DMT6004LPS

DMT6004LPS Green60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features ID MAX 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25C and Robust End Application Low RDS(ON) Minimizes Power Losses 100A 3.1m @ VGS = 10V Low QG Minimizes Switching Losses 60V Lead-Free Finish; RoHS Comp

 0.1. Size:378K  1
 dmt6004lps-13.pdf pdf_icon

DMT6004LPS

DMT6004LPS Green60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features ID MAX 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25C and Robust End Application Low RDS(ON) Minimizes Power Losses 100A 3.1m @ VGS = 10V Low QG Minimizes Switching Losses 60V Lead-Free Finish; RoHS Comp

 7.1. Size:287K  diodes
 dmt6004sct.pdf pdf_icon

DMT6004LPS

DMT6004SCT 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application ID Low Input Capacitance BVDSS RDS(ON) max TC = +25C Low Input/Output Leakage (Note 9) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 60V 3.65m @ VGS = 10V 100A Halogen and Antimony Fre

 7.2. Size:261K  inchange semiconductor
 dmt6004sct.pdf pdf_icon

DMT6004LPS

isc N-Channel MOSFET Transistor DMT6004SCTFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.65m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

MOSTRAR MÁS

Otros transistores... DMT3020LFDF , DMT3020LSD , DMT31M6LPS , DMT32M5LFG , DMT32M5LPS , DMT4002LPS , DMT4011LFG , DMT40M9LPS , STP80NF70 , DMT6004SCT , DMT6005LPS , DMT6009LFG , DMT6009LPS , DMT6009LSS , DMT69M8LSS , DMT8012LK3 , DMTH3004LK3 .

History: HB3510P | RE1E002SP | 2SK3693-01MR | SH8K13 | SIHG17N80E | SJMN600R65CF

 

 
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