DMT6004LPS Todos los transistores

 ..1. Size:378K  diodes
 dmt6004lps.pdf

DMT6004LPS Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features ID MAX 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25 C and Robust End Application Low RDS(ON) Minimizes Power Losses 100A 3.1m @ VGS = 10V Low QG Minimizes Switching Losses 60V Lead-Free Finish; RoHS Comp

 0.1. Size:378K  1
 dmt6004lps-13.pdf

DMT6004LPS Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features ID MAX 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25 C and Robust End Application Low RDS(ON) Minimizes Power Losses 100A 3.1m @ VGS = 10V Low QG Minimizes Switching Losses 60V Lead-Free Finish; RoHS Comp

 7.1. Size:287K  diodes
 dmt6004sct.pdf

DMT6004SCT 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application ID Low Input Capacitance BVDSS RDS(ON) max TC = +25 C Low Input/Output Leakage (Note 9) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 60V 3.65m @ VGS = 10V 100A Halogen and Antimony Fre

 7.2. Size:261K  inchange semiconductor
 dmt6004sct.pdf

isc N-Channel MOSFET Transistor DMT6004SCT FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 3.65m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p