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DMT6005LPS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMT6005LPS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9.4 nS
   Cossⓘ - Capacitancia de salida: 965.2 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: POWERDI5060-8
 

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DMT6005LPS Datasheet (PDF)

 ..1. Size:487K  diodes
 dmt6005lps.pdf pdf_icon

DMT6005LPS

DMT6005LPS Green60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID 100% Unclamped Inductive Switching ensures more reliable and BVDSS RDS(ON) Max TC = +25C robust end application (Note 9) Low RDS(ON) Minimizes Power Losses 4.5m @ VGS = 10V 100A 60V Low QG Minimizes Switching Losses 6.5m @ VGS = 4.5V 100A Lead

 0.1. Size:487K  1
 dmt6005lps-13.pdf pdf_icon

DMT6005LPS

DMT6005LPS Green60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID 100% Unclamped Inductive Switching ensures more reliable and BVDSS RDS(ON) Max TC = +25C robust end application (Note 9) Low RDS(ON) Minimizes Power Losses 4.5m @ VGS = 10V 100A 60V Low QG Minimizes Switching Losses 6.5m @ VGS = 4.5V 100A Lead

 6.1. Size:412K  diodes
 dmt6005lct.pdf pdf_icon

DMT6005LPS

GreenDMT6005LCT 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25C and Robust End Application 6m @ VGS = 10V 100A Low Input Capacitance 60V 10m @ VGS = 4.5V 85A Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halo

 6.2. Size:261K  inchange semiconductor
 dmt6005lct.pdf pdf_icon

DMT6005LPS

isc N-Channel MOSFET Transistor DMT6005LCTFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

MOSTRAR MÁS

Otros transistores... DMT31M6LPS , DMT32M5LFG , DMT32M5LPS , DMT4002LPS , DMT4011LFG , DMT40M9LPS , DMT6004LPS , DMT6004SCT , NCEP15T14 , DMT6009LFG , DMT6009LPS , DMT6009LSS , DMT69M8LSS , DMT8012LK3 , DMTH3004LK3 , DMTH4004LK3 , DMTH4004SCTB .

History: HM1P15PR | JMTP3010D | 2SK2973 | NTMFS5C670NLT3G | ZXMP6A16DN8 | 2SK552 | RF1S540

 

 
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