DMT6005LPS Todos los transistores

 ..1. Size:487K  diodes
 dmt6005lps.pdf

DMT6005LPS Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID 100% Unclamped Inductive Switching ensures more reliable and BVDSS RDS(ON) Max TC = +25 C robust end application (Note 9) Low RDS(ON) Minimizes Power Losses 4.5m @ VGS = 10V 100A 60V Low QG Minimizes Switching Losses 6.5m @ VGS = 4.5V 100A Lead

 0.1. Size:487K  1
 dmt6005lps-13.pdf

DMT6005LPS Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID 100% Unclamped Inductive Switching ensures more reliable and BVDSS RDS(ON) Max TC = +25 C robust end application (Note 9) Low RDS(ON) Minimizes Power Losses 4.5m @ VGS = 10V 100A 60V Low QG Minimizes Switching Losses 6.5m @ VGS = 4.5V 100A Lead

 6.1. Size:412K  diodes
 dmt6005lct.pdf

Green DMT6005LCT 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25 C and Robust End Application 6m @ VGS = 10V 100A Low Input Capacitance 60V 10m @ VGS = 4.5V 85A Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halo

 6.2. Size:261K  inchange semiconductor
 dmt6005lct.pdf

isc N-Channel MOSFET Transistor DMT6005LCT FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 6.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu