DMT6009LFG Todos los transistores

 

DMT6009LFG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMT6009LFG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 19.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 34 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8.6 nS
   Cossⓘ - Capacitancia de salida: 438 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: POWERDI3333-8
 

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DMT6009LFG Datasheet (PDF)

 ..1. Size:432K  diodes
 dmt6009lfg.pdf pdf_icon

DMT6009LFG

DMT6009LFG 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID Max Low RDS(ON) Ensures On-State Losses Are Minimized V(BR)DSS RDS(ON) Max TC = +25C Excellent Qgd x RDS(ON) Product (FOM) Advanced Technology for DC-DC Converters 10m @ VGS = 10V 34A 60V Small Form Factor Thermally Efficient Package Enables Higher 1

 6.1. Size:638K  1
 dmt6009lps-13.pdf pdf_icon

DMT6009LFG

GreenDMT6009LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary Features ID 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25C and Robust End Application 87A 10m @ VGS = 10V Low RDS(ON) Minimizes Power Losses 60V 79A 12m @ VGS = 4.5V Low QG Minimizes Switching Losses Lead-Free Fin

 6.2. Size:585K  diodes
 dmt6009lct.pdf pdf_icon

DMT6009LFG

DMT6009LCT 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Excellent QGD X RDS(ON) Product (FOM) BVDSS RDS(ON) Max TC = +25C Advanced Technology for DC-DC Converts 12m @VGS = 10V 37.2A Low Input/Output Leakage 60V 14.5m @VGS = 4.5V 33.9A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gree

 6.3. Size:638K  diodes
 dmt6009lps.pdf pdf_icon

DMT6009LFG

GreenDMT6009LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary Features ID 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25C and Robust End Application 87A 10m @ VGS = 10V Low RDS(ON) Minimizes Power Losses 60V 79A 12m @ VGS = 4.5V Low QG Minimizes Switching Losses Lead-Free Fin

MOSTRAR MÁS

Otros transistores... DMT32M5LFG , DMT32M5LPS , DMT4002LPS , DMT4011LFG , DMT40M9LPS , DMT6004LPS , DMT6004SCT , DMT6005LPS , IRFP250 , DMT6009LPS , DMT6009LSS , DMT69M8LSS , DMT8012LK3 , DMTH3004LK3 , DMTH4004LK3 , DMTH4004SCTB , DMTH4005SK3 .

History: KI2304DS | HSU80N03

 

 
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