Справочник MOSFET. DMT6009LFG

 

DMT6009LFG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DMT6009LFG
   Маркировка: T69
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 19.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 34 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 33.5 nC
   trⓘ - Время нарастания: 8.6 ns
   Cossⓘ - Выходная емкость: 438 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
   Тип корпуса: POWERDI3333-8

 Аналог (замена) для DMT6009LFG

 

 

DMT6009LFG Datasheet (PDF)

 ..1. Size:432K  diodes
 dmt6009lfg.pdf

DMT6009LFG DMT6009LFG

DMT6009LFG 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID Max Low RDS(ON) Ensures On-State Losses Are Minimized V(BR)DSS RDS(ON) Max TC = +25C Excellent Qgd x RDS(ON) Product (FOM) Advanced Technology for DC-DC Converters 10m @ VGS = 10V 34A 60V Small Form Factor Thermally Efficient Package Enables Higher 1

 6.1. Size:638K  1
 dmt6009lps-13.pdf

DMT6009LFG DMT6009LFG

GreenDMT6009LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary Features ID 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25C and Robust End Application 87A 10m @ VGS = 10V Low RDS(ON) Minimizes Power Losses 60V 79A 12m @ VGS = 4.5V Low QG Minimizes Switching Losses Lead-Free Fin

 6.2. Size:585K  diodes
 dmt6009lct.pdf

DMT6009LFG DMT6009LFG

DMT6009LCT 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Excellent QGD X RDS(ON) Product (FOM) BVDSS RDS(ON) Max TC = +25C Advanced Technology for DC-DC Converts 12m @VGS = 10V 37.2A Low Input/Output Leakage 60V 14.5m @VGS = 4.5V 33.9A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gree

 6.3. Size:638K  diodes
 dmt6009lps.pdf

DMT6009LFG DMT6009LFG

GreenDMT6009LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary Features ID 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25C and Robust End Application 87A 10m @ VGS = 10V Low RDS(ON) Minimizes Power Losses 60V 79A 12m @ VGS = 4.5V Low QG Minimizes Switching Losses Lead-Free Fin

 6.4. Size:474K  diodes
 dmt6009lss.pdf

DMT6009LFG DMT6009LFG

DMT6009LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) Test in Production ID max BVDSS RDS(ON) max TA = +25C High Conversion Efficiency Low RDS(ON) Ensures On State Losses Are Minimized 9.5m @ VGS = 10V 10.8A 60V Excellent Qgd x RDS(ON) Product (FOM) 12m @ VGS = 4.5V 9.6

 6.5. Size:261K  inchange semiconductor
 dmt6009lct.pdf

DMT6009LFG DMT6009LFG

isc N-Channel MOSFET Transistor DMT6009LCTFEATURESDrain Current I = 37.2A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

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History: AO4458

 

 
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