DMT8012LK3 Todos los transistores

 

DMT8012LK3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMT8012LK3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 44 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.8 nS

Cossⓘ - Capacitancia de salida: 177 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm

Encapsulados: TO252

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DMT8012LK3 datasheet

 ..1. Size:502K  diodes
dmt8012lk3.pdf pdf_icon

DMT8012LK3

DMT8012LK3 Green 80V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID max Low RDS(ON) ensures on state losses are minimized BVDSS RDS(ON) max TC = +25 C High Conversion Efficiency Low Input Capacitance 17m @ VGS = 10V 44A Fast Switching Speed 80V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 22m @ VGS = 4.5V 38A Halogen a

 6.1. Size:267K  diodes
dmt8012lfg.pdf pdf_icon

DMT8012LK3

DMT8012LFG N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Excellent Qgd x RDS(ON) Product (FOM) TC = +25 C Advanced Technology for DC/DC converts 16m @ VGS = 10V 35A 80V Small form factor thermally efficient package enables higher 22m @ VGS =

 9.1. Size:480K  fairchild semi
fdmt800152dc.pdf pdf_icon

DMT8012LK3

March 2015 FDMT800152DC N-Channel Dual CoolTM PowerTrench MOSFET 150 V, 72 A, 9.0 m Features General Description Max rDS(on) = 9.0 m at VGS = 10 V, ID = 13 A This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 6 V, ID = 11 A Semiconductor s advanced PowerTrench process. Advanced Package and Silicon combination for low rDS(on) Advancements in bo

 9.2. Size:364K  fairchild semi
fdmt800150dc.pdf pdf_icon

DMT8012LK3

February 2015 FDMT800150DC N-Channel Dual CoolTM PowerTrench MOSFET 150 V, 99 A, 6.5 m Features General Description Max rDS(on) = 6.5 m at VGS = 10 V, ID = 15 A This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 8.4 m at VGS = 6 V, ID = 13 A Semiconductor s advanced PowerTrench process. Advanced Package and Silicon combination for low rDS(on) Advancements in

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