DMT8012LK3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMT8012LK3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 44 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.8 nS
Cossⓘ - Capacitancia de salida: 177 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de DMT8012LK3 MOSFET
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DMT8012LK3 datasheet
dmt8012lk3.pdf
DMT8012LK3 Green 80V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID max Low RDS(ON) ensures on state losses are minimized BVDSS RDS(ON) max TC = +25 C High Conversion Efficiency Low Input Capacitance 17m @ VGS = 10V 44A Fast Switching Speed 80V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 22m @ VGS = 4.5V 38A Halogen a
dmt8012lfg.pdf
DMT8012LFG N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Excellent Qgd x RDS(ON) Product (FOM) TC = +25 C Advanced Technology for DC/DC converts 16m @ VGS = 10V 35A 80V Small form factor thermally efficient package enables higher 22m @ VGS =
fdmt800152dc.pdf
March 2015 FDMT800152DC N-Channel Dual CoolTM PowerTrench MOSFET 150 V, 72 A, 9.0 m Features General Description Max rDS(on) = 9.0 m at VGS = 10 V, ID = 13 A This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 6 V, ID = 11 A Semiconductor s advanced PowerTrench process. Advanced Package and Silicon combination for low rDS(on) Advancements in bo
fdmt800150dc.pdf
February 2015 FDMT800150DC N-Channel Dual CoolTM PowerTrench MOSFET 150 V, 99 A, 6.5 m Features General Description Max rDS(on) = 6.5 m at VGS = 10 V, ID = 15 A This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 8.4 m at VGS = 6 V, ID = 13 A Semiconductor s advanced PowerTrench process. Advanced Package and Silicon combination for low rDS(on) Advancements in
Otros transistores... DMT40M9LPS , DMT6004LPS , DMT6004SCT , DMT6005LPS , DMT6009LFG , DMT6009LPS , DMT6009LSS , DMT69M8LSS , AO4407 , DMTH3004LK3 , DMTH4004LK3 , DMTH4004SCTB , DMTH4005SK3 , DMTH4007LK3 , DMTH4007LPS , DMTH6002LPS , DMTH6004SK3 .
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