DMTH4004SCTB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMTH4004SCTB
   Código: T4004SCTB
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 136 W
   Voltaje máximo drenador - fuente |Vds|: 40 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 100 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 68.6 nC
   Tiempo de subida (tr): 6.7 nS
   Conductancia de drenaje-sustrato (Cd): 1441 pF
   Resistencia entre drenaje y fuente RDS(on): 0.003 Ohm
   Paquete / Cubierta: TO263AB

Búsqueda de reemplazo de MOSFET DMTH4004SCTB

DMTH4004SCTB Datasheet (PDF)

..1. Size:695K diodes
dmth4004sctb.pdf

GreenDMTH4004SCTB 40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID Environments BVDSS RDS(ON) max TC = +25C 100% Unclamped Inductive Switching Ensures More Reliable (Note 9) and Robust End Application 40V 3m @ VGS = 10V 100A Low RDS(ON) Minimizes Power Losses

..2. Size:254K inchange semiconductor
dmth4004sctb.pdf

isc N-Channel MOSFET Transistor DMTH4004SCTBFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

6.1. Size:450K diodes
dmth4004lk3.pdf

DMTH4004LK3 Green40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Max Rated to 175C Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25C Environments (Note 9) 100% Unclamped Inductive Switching Ensures More Reliable and 3m @ VGS = 10V 100A Robust End Application 40V 5m @ VGS = 4.5V 100A Low Rdson

7.1. Size:479K 1
dmth4007lps-13.pdf

DMTH4007LPS Green40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) Max TC = +25C High Conversion Efficiency 100A 6.5m @ VGS = 10V Low RDS(ON) Minimizes On-State Losses 40V 9.8m @ VGS = 4.5V 80A Low Input Capacitance Fast Swi

7.2. Size:392K diodes
dmth4005sk3.pdf

GreenDMTH4005SK3 40V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features C ID Rated to +175 Ideal for High Ambient Temperature BVDSS RDS(ON) max TC = +25C Environments 100% Unclamped Inductive Switching ensures more reliable 40V 95A 4.5m @ VGS = 10V and robust end application Low RDS(ON) minimizes power losses Low

7.3. Size:416K diodes
dmth4005sct.pdf

DMTH4005SCT 40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID Environments BVDSS RDS(ON) Max TC = +25C 100% Unclamped Inductive Switching Ensures More Reliable 40V 4.7m @ VGS = 10V 100A and Robust End Application Low Input Capacitance Low Input/Output Leakage

7.4. Size:479K diodes
dmth4007lps.pdf

7.5. Size:562K diodes
dmth4007lk3.pdf

GreenDMTH4007LK3 40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low RDS(ON) Ensures On State Losses are Minimized ID Max BVDSS RDS(ON) Max TC = +25C Excellent Qgd x RDS(ON) Product (FOM) Advanced Technology for DC-DC Converters 7.3m @ VGS = 10V 70A 40V Small Form Factor Thermally Efficient Package Enables Higher 9.8m @

7.6. Size:260K inchange semiconductor
dmth4005sct.pdf

isc N-Channel MOSFET Transistor DMTH4005SCTFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 4.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

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