DMTH4005SK3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMTH4005SK3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 100 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 95 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.8 nS
Cossⓘ - Capacitancia de salida: 902 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de DMTH4005SK3 MOSFET
DMTH4005SK3 Datasheet (PDF)
dmth4005sk3.pdf

GreenDMTH4005SK3 40V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features C ID Rated to +175 Ideal for High Ambient Temperature BVDSS RDS(ON) max TC = +25C Environments 100% Unclamped Inductive Switching ensures more reliable 40V 95A 4.5m @ VGS = 10V and robust end application Low RDS(ON) minimizes power losses Low
dmth4005sct.pdf

DMTH4005SCT 40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID Environments BVDSS RDS(ON) Max TC = +25C 100% Unclamped Inductive Switching Ensures More Reliable 40V 4.7m @ VGS = 10V 100A and Robust End Application Low Input Capacitance Low Input/Output Leakage
dmth4005sct.pdf

isc N-Channel MOSFET Transistor DMTH4005SCTFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 4.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
dmth4007lps-13.pdf

DMTH4007LPS Green40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) Max TC = +25C High Conversion Efficiency 100A 6.5m @ VGS = 10V Low RDS(ON) Minimizes On-State Losses 40V 9.8m @ VGS = 4.5V 80A Low Input Capacitance Fast Swi
Otros transistores... DMT6009LFG , DMT6009LPS , DMT6009LSS , DMT69M8LSS , DMT8012LK3 , DMTH3004LK3 , DMTH4004LK3 , DMTH4004SCTB , P0903BDG , DMTH4007LK3 , DMTH4007LPS , DMTH6002LPS , DMTH6004SK3 , DMTH6004SK3Q , DMTH6005LK3Q , DMTH6009LK3 , DMTH6009LK3Q .
History: FJ3303010L | FQH140N10 | SVS70R420FE3 | RJL6015DPK | HGP059N12SL | 2SK564 | SM4336NSKP
History: FJ3303010L | FQH140N10 | SVS70R420FE3 | RJL6015DPK | HGP059N12SL | 2SK564 | SM4336NSKP



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
40636 transistor | ao3407 datasheet | c1841 transistor | fb42n20d | irfb3306 equivalent | irfp460 характеристики | k2837 datasheet | k389 transistor