Справочник MOSFET. DMTH4005SK3

 

DMTH4005SK3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DMTH4005SK3
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 100 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 95 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 6.8 ns
   Cossⓘ - Выходная емкость: 902 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
   Тип корпуса: TO252

 Аналог (замена) для DMTH4005SK3

 

 

DMTH4005SK3 Datasheet (PDF)

 ..1. Size:392K  diodes
dmth4005sk3.pdf

DMTH4005SK3
DMTH4005SK3

GreenDMTH4005SK3 40V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features C ID Rated to +175 Ideal for High Ambient Temperature BVDSS RDS(ON) max TC = +25C Environments 100% Unclamped Inductive Switching ensures more reliable 40V 95A 4.5m @ VGS = 10V and robust end application Low RDS(ON) minimizes power losses Low

 5.1. Size:416K  diodes
dmth4005sct.pdf

DMTH4005SK3
DMTH4005SK3

DMTH4005SCT 40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID Environments BVDSS RDS(ON) Max TC = +25C 100% Unclamped Inductive Switching Ensures More Reliable 40V 4.7m @ VGS = 10V 100A and Robust End Application Low Input Capacitance Low Input/Output Leakage

 5.2. Size:260K  inchange semiconductor
dmth4005sct.pdf

DMTH4005SK3
DMTH4005SK3

isc N-Channel MOSFET Transistor DMTH4005SCTFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 4.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

 7.1. Size:479K  1
dmth4007lps-13.pdf

DMTH4005SK3
DMTH4005SK3

DMTH4007LPS Green40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) Max TC = +25C High Conversion Efficiency 100A 6.5m @ VGS = 10V Low RDS(ON) Minimizes On-State Losses 40V 9.8m @ VGS = 4.5V 80A Low Input Capacitance Fast Swi

 7.2. Size:450K  diodes
dmth4004lk3.pdf

DMTH4005SK3
DMTH4005SK3

DMTH4004LK3 Green40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Max Rated to 175C Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25C Environments (Note 9) 100% Unclamped Inductive Switching Ensures More Reliable and 3m @ VGS = 10V 100A Robust End Application 40V 5m @ VGS = 4.5V 100A Low Rdson

 7.3. Size:695K  diodes
dmth4004sctb.pdf

DMTH4005SK3
DMTH4005SK3

GreenDMTH4004SCTB 40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID Environments BVDSS RDS(ON) max TC = +25C 100% Unclamped Inductive Switching Ensures More Reliable (Note 9) and Robust End Application 40V 3m @ VGS = 10V 100A Low RDS(ON) Minimizes Power Losses

 7.4. Size:479K  diodes
dmth4007lps.pdf

DMTH4005SK3
DMTH4005SK3

DMTH4007LPS Green40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) Max TC = +25C High Conversion Efficiency 100A 6.5m @ VGS = 10V Low RDS(ON) Minimizes On-State Losses 40V 9.8m @ VGS = 4.5V 80A Low Input Capacitance Fast Swi

 7.5. Size:562K  diodes
dmth4007lk3.pdf

DMTH4005SK3
DMTH4005SK3

GreenDMTH4007LK3 40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low RDS(ON) Ensures On State Losses are Minimized ID Max BVDSS RDS(ON) Max TC = +25C Excellent Qgd x RDS(ON) Product (FOM) Advanced Technology for DC-DC Converters 7.3m @ VGS = 10V 70A 40V Small Form Factor Thermally Efficient Package Enables Higher 9.8m @

 7.6. Size:254K  inchange semiconductor
dmth4004sctb.pdf

DMTH4005SK3
DMTH4005SK3

isc N-Channel MOSFET Transistor DMTH4004SCTBFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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