DMTH6004SK3 Todos los transistores

 

DMTH6004SK3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMTH6004SK3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 180 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11.7 nS
   Cossⓘ - Capacitancia de salida: 1383 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0038 Ohm
   Paquete / Cubierta: TO252
 

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DMTH6004SK3 Datasheet (PDF)

 ..1. Size:632K  diodes
 dmth6004sk3.pdf pdf_icon

DMTH6004SK3

GreenDMTH6004SK3 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal For High Ambient Temperature ID Max Environments BVDSS RDS(ON) Max TC = +25C 100% Unclamped Inductive Switching Ensures More Reliable (Note 9) and Robust End Application 60V 3.8m @ VGS = 10V 100A Low RDS(ON) Minimizes Power Losses

 0.1. Size:601K  diodes
 dmth6004sk3q.pdf pdf_icon

DMTH6004SK3

GreenDMTH6004SK3Q 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features C ID Max Rated to +175 Ideal for High Ambient Temperature Environments BVDSS RDS(ON) Max QG Typ TC = +25C 100% Unclamped Inductive Switching Ensures More Reliable (Note 10) and Robust End Application 95.4nC 60V 3.8m @ VGS = 10V 100A Low RDS(ON) M

 5.1. Size:339K  diodes
 dmth6004sct.pdf pdf_icon

DMTH6004SK3

DMTH6004SCT 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance BVDSS RDS(ON) Max TC = +25C Low Input/Output Leakage (Note 9) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 60V 3.65m @ VGS = 10V 100A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability

 5.2. Size:541K  diodes
 dmth6004sctb.pdf pdf_icon

DMTH6004SK3

DMTH6004SCTB Green60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Rated to +175 Ideal for High Ambient Temperature C BVDSS RDS(ON) Max TC = +25C Environments (Note 9) 100% Unclamped Inductive Switching Ensures More Reliable 60V 3.4m @ VGS = 10V 100A and Robust End Application Low RDS(ON) Minimizes Power Losses

MOSTRAR MÁS

Otros transistores... DMT8012LK3 , DMTH3004LK3 , DMTH4004LK3 , DMTH4004SCTB , DMTH4005SK3 , DMTH4007LK3 , DMTH4007LPS , DMTH6002LPS , IRF2807 , DMTH6004SK3Q , DMTH6005LK3Q , DMTH6009LK3 , DMTH6009LK3Q , DMTH6010LK3 , DMTH6010LPSQ , DMTH6016LSD , DMTH8003SPS .

History: FDMB2307NZ | RU2N65P | F12N65 | SSF11NS65 | WMJ15N80M3 | MMD80R1K2QZRH | SIZ918DT

 

 
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