DMTH6004SK3Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMTH6004SK3Q
Código: T6004S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 180 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 100 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 95.4 nC
Tiempo de subida (tr): 11.7 nS
Conductancia de drenaje-sustrato (Cd): 1383 pF
Resistencia entre drenaje y fuente RDS(on): 0.0038 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET DMTH6004SK3Q
DMTH6004SK3Q Datasheet (PDF)
dmth6004sk3q.pdf
GreenDMTH6004SK3Q 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features C ID Max Rated to +175 Ideal for High Ambient Temperature Environments BVDSS RDS(ON) Max QG Typ TC = +25C 100% Unclamped Inductive Switching Ensures More Reliable (Note 10) and Robust End Application 95.4nC 60V 3.8m @ VGS = 10V 100A Low RDS(ON) M
dmth6004sk3.pdf
GreenDMTH6004SK3 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal For High Ambient Temperature ID Max Environments BVDSS RDS(ON) Max TC = +25C 100% Unclamped Inductive Switching Ensures More Reliable (Note 9) and Robust End Application 60V 3.8m @ VGS = 10V 100A Low RDS(ON) Minimizes Power Losses
dmth6004sct.pdf
DMTH6004SCT 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance BVDSS RDS(ON) Max TC = +25C Low Input/Output Leakage (Note 9) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 60V 3.65m @ VGS = 10V 100A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
dmth6004sctb.pdf
DMTH6004SCTB Green60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Rated to +175 Ideal for High Ambient Temperature C BVDSS RDS(ON) Max TC = +25C Environments (Note 9) 100% Unclamped Inductive Switching Ensures More Reliable 60V 3.4m @ VGS = 10V 100A and Robust End Application Low RDS(ON) Minimizes Power Losses
dmth6004sct.pdf
isc N-Channel MOSFET Transistor DMTH6004SCTFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.65m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
dmth6004sctb.pdf
isc N-Channel MOSFET Transistor DMTH6004SCTBFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: MTE13N08J3
