All MOSFET. DMTH6004SK3Q Datasheet

 

DMTH6004SK3Q Datasheet and Replacement


   Type Designator: DMTH6004SK3Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11.7 nS
   Cossⓘ - Output Capacitance: 1383 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: TO252
 

 DMTH6004SK3Q substitution

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DMTH6004SK3Q Datasheet (PDF)

 ..1. Size:601K  diodes
dmth6004sk3q.pdf pdf_icon

DMTH6004SK3Q

GreenDMTH6004SK3Q 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features C ID Max Rated to +175 Ideal for High Ambient Temperature Environments BVDSS RDS(ON) Max QG Typ TC = +25C 100% Unclamped Inductive Switching Ensures More Reliable (Note 10) and Robust End Application 95.4nC 60V 3.8m @ VGS = 10V 100A Low RDS(ON) M

 3.1. Size:632K  diodes
dmth6004sk3.pdf pdf_icon

DMTH6004SK3Q

GreenDMTH6004SK3 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal For High Ambient Temperature ID Max Environments BVDSS RDS(ON) Max TC = +25C 100% Unclamped Inductive Switching Ensures More Reliable (Note 9) and Robust End Application 60V 3.8m @ VGS = 10V 100A Low RDS(ON) Minimizes Power Losses

 5.1. Size:339K  diodes
dmth6004sct.pdf pdf_icon

DMTH6004SK3Q

DMTH6004SCT 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance BVDSS RDS(ON) Max TC = +25C Low Input/Output Leakage (Note 9) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 60V 3.65m @ VGS = 10V 100A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability

 5.2. Size:541K  diodes
dmth6004sctb.pdf pdf_icon

DMTH6004SK3Q

DMTH6004SCTB Green60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Rated to +175 Ideal for High Ambient Temperature C BVDSS RDS(ON) Max TC = +25C Environments (Note 9) 100% Unclamped Inductive Switching Ensures More Reliable 60V 3.4m @ VGS = 10V 100A and Robust End Application Low RDS(ON) Minimizes Power Losses

Datasheet: DMTH3004LK3 , DMTH4004LK3 , DMTH4004SCTB , DMTH4005SK3 , DMTH4007LK3 , DMTH4007LPS , DMTH6002LPS , DMTH6004SK3 , IRFZ46N , DMTH6005LK3Q , DMTH6009LK3 , DMTH6009LK3Q , DMTH6010LK3 , DMTH6010LPSQ , DMTH6016LSD , DMTH8003SPS , DMTH8012LPSW .

History: TPC8120 | SM6F01NSFP | PMPB10EN | NCE50NF220K | UT75N02 | AM2340N | MPSW65M046CFD

Keywords - DMTH6004SK3Q MOSFET datasheet

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