DMTH6010LPSQ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMTH6010LPSQ
Código: H6010LS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 136 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 VQgⓘ - Carga de la puerta: 41.3 nC
trⓘ - Tiempo de subida: 4.3 nS
Cossⓘ - Capacitancia de salida: 746 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
Paquete / Cubierta: POWERDI5060-8
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DMTH6010LPSQ Datasheet (PDF)
dmth6010lpsq.pdf
DMTH6010LPSQ Green60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID BVDSS RDS(ON) Environments TC = +25C (Note 10) 100% Unclamped Inductive Switching (UIS) Test in Production 8m @ VGS = 10V 100A Ensures More Reliable and Robust End Application 60V 12m
dmth6010lpsq-13.pdf
DMTH6010LPSQ Green60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID BVDSS RDS(ON) Environments TC = +25C (Note 10) 100% Unclamped Inductive Switching (UIS) Test in Production 8m @ VGS = 10V 100A Ensures More Reliable and Robust End Application 60V 12m
dmth6010lk3.pdf
Green DMTH6010LK3 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID Max Excellent Qgd x RDS (ON) Product (FOM) BVDSS RDS(ON) Max TC = +25C Advanced Technology for DC/DC Converters 8m @ VGS = 10V 70A 60V Small form factor thermally efficient package enables hi
dmth6010sct.pdf
DMTH6010SCT 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Rated to +175 Ideal for High Ambient TemperatureC BVDSS RDS(ON) Max TC = +25C Environments60V 7.2m @ VGS = 10V 100A 100% Unclamped Inductive Switching Ensures More Reliableand Robust End Application Low Input CapacitanceDescription Low Input/Output Lea
dmth6010sct.pdf
isc N-Channel MOSFET Transistor DMTH6010SCTFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
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