DMG3N60SJ3 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DMG3N60SJ3 datasheet

..1. Size:437K diodes
dmg3n60sj3.pdf pdf_icon

DMG3N60SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance BV I DSS D R Max DS(ON) (@ T Max) @T = +25 C High BV Rating for Power Application J C DSS Low Input Capacitance 650V 2.8A 3.5 @ V = 10V GS Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3)

..2. Size:274K inchange semiconductor
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isc N-Channel MOSFET Transistor DMG3N60SJ3 FEATURES Drain Current I = 2.8A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 350m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p

6.1. Size:490K 1
dmg3n60sct.pdf pdf_icon

DMG3N60SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS RDS(ON) Package High BVDSS Rating for Power Application TC = +25 C TO220AB Low Input/Output Leakage 600V 3.5 @VGS = 10V 3.3A (Type TH) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Mechanica

6.2. Size:251K inchange semiconductor
dmg3n60sct.pdf pdf_icon

isc N-Channel MOSFET Transistor DMG3N60SCT FEATURES Static drain-source on-resistance RDS(on) 3.5 Fully characterized avalanche voltage and current 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION DC/DC Converter Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

Otros transistores... DMTH6010LPSQ , DMTH6016LSD , DMTH8003SPS , DMTH8012LPSW , ZXMP10A13FQ , ZXMS6005DGQ-13 , 19N20 , DMG10N60SCT , IRFB31N20D , DMG4N60SCT , DMG4N60SJ3 , DMG4N60SK3 , DMG7N65SCT , DMG7N65SCTI , DMG7N65SJ3 , DMG8N65SCT , DMJ70H1D0SV3 .