Справочник MOSFET. DMG3N60SJ3

 

DMG3N60SJ3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DMG3N60SJ3
   Маркировка: 3N60SJ
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 41 W
   Предельно допустимое напряжение сток-исток |Uds|: 600 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 2.8 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 12.6 nC
   Время нарастания (tr): 22 ns
   Выходная емкость (Cd): 41 pf
   Сопротивление сток-исток открытого транзистора (Rds): 3.5 Ohm
   Тип корпуса: TO251

 Аналог (замена) для DMG3N60SJ3

 

 

DMG3N60SJ3 Datasheet (PDF)

 ..1. Size:437K  diodes
dmg3n60sj3.pdf

DMG3N60SJ3
DMG3N60SJ3

DMG3N60SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance BV I DSS DR Max DS(ON)(@ T Max) @T = +25C High BV Rating for Power Application J C DSS Low Input Capacitance 650V 2.8A 3.5 @ V = 10V GS Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3)

 ..2. Size:274K  inchange semiconductor
dmg3n60sj3.pdf

DMG3N60SJ3
DMG3N60SJ3

isc N-Channel MOSFET Transistor DMG3N60SJ3FEATURESDrain Current I = 2.8A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 350m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

 6.1. Size:490K  1
dmg3n60sct.pdf

DMG3N60SJ3
DMG3N60SJ3

DMG3N60SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS RDS(ON) Package High BVDSS Rating for Power Application TC = +25C TO220AB Low Input/Output Leakage 600V 3.5@VGS = 10V 3.3A (Type TH) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Mechanica

 6.2. Size:251K  inchange semiconductor
dmg3n60sct.pdf

DMG3N60SJ3
DMG3N60SJ3

isc N-Channel MOSFET Transistor DMG3N60SCTFEATURESStatic drain-source on-resistance:RDS(on) 3.5Fully characterized avalanche voltage and current100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONDC/DC ConverterMotor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

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