DMG4N60SJ3 Todos los transistores

 ..1. Size:396K  diodes
 dmg4n60sj3.pdf

NOT RECOMMENDED FOR NEW DESIGN USE DMG3N60SJ3 DMG4N60SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance BVDSS (@ TJ Max) RDS(ON) Max TC = +25 C High BVDSS Rating for Power Application 650V 3.0A Low Input Capacitance 2.5 @ VGS = 10V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony F

 ..2. Size:273K  inchange semiconductor
 dmg4n60sj3.pdf

isc N-Channel MOSFET Transistor DMG4N60SJ3 FEATURES Drain Current I = 3A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 2.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 6.1. Size:388K  diodes
 dmg4n60sct.pdf

NOT RECOMMENDED FOR NEW DESIGN USE DMG3N60SCT DMG4N60SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS (@ TJ Max) RDS(ON) High BVDSS Rating for Power Application TC = +25 C Low Input/Output Leakage 650V 2.5 @VGS = 10V 4.5A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gre

 6.2. Size:375K  diodes
 dmg4n60sk3.pdf

NOT RECOMMENDED FOR NEW DESIGN USE DMN60H3D5SK3 / DMN60H4D5SK3 DMG4N60SK3 600V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID 100% Unclamped Inductive Switch (UIS) Test in Production V(BR)DSS (@ TJ Max) RDS(ON) Max TC = +25 C Low Gate Input Resistance 650V 3.7A Low Input Capacitance 2.3 @ VGS = 10V Lead-Free Finish; RoHS Compliant (Note

 6.3. Size:260K  inchange semiconductor
 dmg4n60sct.pdf

isc N-Channel MOSFET Transistor DMG4N60SCT FEATURES Drain Current I = 4.5A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 2.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

 6.4. Size:266K  inchange semiconductor
 dmg4n60sk3.pdf

isc N-Channel MOSFET Transistor DMG4N60SK3 FEATURES Drain Current I = 3.7A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 2.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu